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Investigation Of Device Parameters For Field-Effect Dna-Sensors By Three-Dimensional Simulation, Eddie Howell, Clemens Heitzinger, Gerhard Klimeck

Other Nanotechnology Publications

The development of a DNA field-effect transistor (DNAFET) simulator is described and implications on device structure and future experiments are discussed. In DNAFETs the gate structure is replaced by a layer of immobilized single-stranded DNA molecules which act as surface probe molecules [1, 2]. When complementary DNA strands bind to the receptors, the charge distribution near the surface of the device changes, modulating current transport through the device and enabling detection (cf. Fig. 1 and 5). Arrays of DNAFETs can be used for detecting singlenucleotide polymorphisms and for DNA sequencing. The advantage of DNAFETs over optical methods of detection is …