Open Access. Powered by Scholars. Published by Universities.®
Nanoscience and Nanotechnology Commons™
Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 5 of 5
Full-Text Articles in Nanoscience and Nanotechnology
Investigation Of Optical Second Harmonic Generation From Si (100) With Process Tailored Surface & Embedded Ag Nanostructures For Advanced Si Nonlinear Nanophotonics, Gourav Bhowmik
Legacy Theses & Dissertations (2009 - 2024)
The challenge of current microelectronic architecture in transmission bandwidth and power consumption can be potentially solved by using silicon photonics technologies that are compatible with modern CMOS fabrication. One of the critical active photonic devices for Si photonics is a Si based optical modulator. Most of the reported silicon modulators rely on the free carrier plasma dispersion effect. In those cases, a weak change of the refractive index obtained by carrier accumulation, injection or depletion is utilized in a Mach-Zehnder interferometer or a microring resonator to achieve intensity modulation, rendering them difficult for chip-level implementation due to a large footprint …
Novel Methods For The Crystallization Of Thin Film Silicon, Shane Mcmahon
Novel Methods For The Crystallization Of Thin Film Silicon, Shane Mcmahon
Legacy Theses & Dissertations (2009 - 2024)
Underpinning much of the technological innovation over the past few decades in the fields of sensors, lighting, displays, and energy conversion has been thin-film electronics. While many of the surfaces in our environment have curvature, silicon wafers do not. Flexible electronics attempt to overcome this fundamental limitation in form factor. Flexible thin-film transistors (TFTs) can be fabricated over large areas to provide switching and driving elements for displays and other devices. While printable organic semiconductors have made significant advances over the past few years, they cannot match the performance capability, electrical quality, temperature compatibility, or stability of silicon. For this …
Effect Of Ion Flux (Dose Rate) In Source-Drain Extension Ion Implantation For 10-Nm Node Finfet And Beyond On 300/450mm Platforms, Ming-Yi Shen
Legacy Theses & Dissertations (2009 - 2024)
The improvement of wafer equipment productivity has been a continuous effort of the semiconductor industry. Higher productivity implies lower product price, which economically drives more demand from the market. This is desired by the semiconductor manufacturing industry. By raising the ion beam current of the ion implanter for 300/450mm platforms, it is possible to increase the throughput of the ion implanter. The resulting dose rate can be comparable to the performance of conventional ion implanters or higher, depending on beam current and beam size. Thus, effects caused by higher dose rate must be investigated further. One of the major applications …
Materials Engineering For Near-Infrared Light Emission From Silicon Compatible Mos Structures, Himani Suhag Kamineni
Materials Engineering For Near-Infrared Light Emission From Silicon Compatible Mos Structures, Himani Suhag Kamineni
Legacy Theses & Dissertations (2009 - 2024)
Silicon-based photonics requires several components, such as a light source, an amplifier/waveguide to transfer the signal, and a photodetector to detect the signal. The motivation for using these silicon-based technologies in photonics applications is two-fold: economic advantages offered by the compatibility with mature silicon IC manufacturing and its excellent material properties for photonic devices (high thermal conductivity, high optical damage threshold, etc.). One of the major challenges in the realization of this technology is the Si-based light source. Because of its indirect bandgap, silicon has very inefficient band-to-band radiative electron-hole recombination. To overcome this obstacle, tremendous research efforts have been …
Electron-Phonon Interactions And Quantum Confinement Effects On Optical Transitions In Nanoscale Silicon Films, Vimal Kumar Kamineni
Electron-Phonon Interactions And Quantum Confinement Effects On Optical Transitions In Nanoscale Silicon Films, Vimal Kumar Kamineni
Legacy Theses & Dissertations (2009 - 2024)
Theoretical studies have attributed the temperature dependence of the linear optical response (dielectric function) of bulk semiconductors to electron-phonon interactions and thermal expansion of the lattice. However, the role of phonons in the optical properties of nanoscale structures is often overlooked. This thesis systematically investigates the impact of both carrier confinement and electron-phonon interactions using nanoscale films of silicon in crystalline silicon quantum wells (c-Si QW). Spectroscopic ellipsometry (SE) is a linear optical technique used to of extract the dielectric function and thickness of very thin films. X-ray reflectivity (XRR) was used as the complementary thickness metrology method. The dielectric …