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Atomistic Full-Band Simulations Of Si Nanowire Transistors: Effects Of Electron-Phonon Scattering, Mathieu Luisier, Gerhard Klimeck

Gerhard Klimeck

An atomistic full-band quantum transport simulator has been developed to study three-dimensional Si nanowire field-effect transistors (FETs) in the presence of electron-phonon scattering. The Non-equilibrium Green's Function (NEGF) formalism is solved in a nearest-neighbor sp(3)d(5)s* tight-binding basis. The scattering self-energies are derived in the self-consistent Born approximation to inelastically couple the full electron and phonon energy spectra. The band dispersion and the eigenmodes of the confined phonons are calculated using a dynamical matrix that includes the bond and angle deformations of the nanowires. The optimization of the numerical algorithms and the parallelization of the NEGF scheme enable the investigation of …