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BUCKLING DYNAMICS; ELASTIC MEMBRANES; THERMAL-EXPANSION; GRAPHITE; SURFACE; FILMS; GRAPHITIZATION; 6H-SIC(0001); TEMPERATURE; SHEETS
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Full-Text Articles in Nanoscience and Nanotechnology
Afm Study Of Ridges In Few-Layer Epitaxial Graphene Grown On The Carbon-Face Of 4h-Sic(000(1)Over-Bar), Gyan Prakash, Michael Capano, Michael Bolen, Dmitry Zemlyanov, R. Reifenberger
Afm Study Of Ridges In Few-Layer Epitaxial Graphene Grown On The Carbon-Face Of 4h-Sic(000(1)Over-Bar), Gyan Prakash, Michael Capano, Michael Bolen, Dmitry Zemlyanov, R. Reifenberger
Dmitry Yurievich Zemlyanov
A characterization of the graphitic overlayer that forms on 4H-SiC(000 (1) over bar) substrates heated for ten minutes to temperatures T > 1350 degrees C under vacuum conditions has been performed. X-ray photoelectron spectroscopy of the C-face reveals the presence of graphitic carbon with a thickness that increases with growth temperature. Parallel atomic force microscope (AFM) studies find a mesh-like network of ridges with high curvature that bound atomically flat, tile-like facets of few-layer graphene (FLG). By imaging the network that develops on FLG, it is possible to map out the regions where the elastic energy is concentrated.