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Full-Text Articles in Nanoscience and Nanotechnology
Novel Uses Of Directly Patternable Silicon Oxide Based Resist For Advanced Patterning Applications, Vishal Umeshbhai Desai
Novel Uses Of Directly Patternable Silicon Oxide Based Resist For Advanced Patterning Applications, Vishal Umeshbhai Desai
Legacy Theses & Dissertations (2009 - 2024)
Novel applications for the directly-patternable resist material, hydrogen silsesquioxane (HSQ), were studied for multiple advanced lithography techniques. Initially, electron beam lithography (EBL) patterned low-resolution HSQ patterns were demonstrated as a mandrel in a self-aligned double patterning (SADP) approach. Using the novel EBL-SADP approach, the number of total process steps was reduced, as compared to conventional SADP methods. This work provided proof-of-concept for using HSQ resist as a directly-patternable mandrel and plasma enhanced chemical vapor deposited (PECVD) low-stress silicon nitride (LSSiN) as a spacer. Furthermore, rapid thermal annealing (RTA) was demonstrated as a method to increase the spacer etch resistance in …
Mechanisms Of Euv Exposure : Photons, Electrons And Holes, Amrit Kausik Narasimhan
Mechanisms Of Euv Exposure : Photons, Electrons And Holes, Amrit Kausik Narasimhan
Legacy Theses & Dissertations (2009 - 2024)
The microelectronics industry’s movement toward smaller and smaller feature sizes has necessitated a shift to Extreme Ultra-Violet (EUV) lithography to be able to pattern sub 20-nm features, much like earlier shifts from i-line to 248 nm. However, this shift from 193-nm lithography to EUV (13.5 nm) poses significant obstacles. EUV is the first optical lithography to operate in an energy range (92 eV per photon vs. 6.4 eV per photon for 193 nm lithography) above the electron binding energies of common resist atomic species. This significant energy increase complicates resist design. For exposures of equal dose, resists receive 14 times …