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Analysis Of Scratches Formed On Oxide Surface During Chemical Mechanical Planarization, Jae-Gon Choi, Y. Prasad, In-Kwon Kim, In-Gon Kim, Woo-Jin Kim, Ahmed Busnaina, Jin-Goo Park
Analysis Of Scratches Formed On Oxide Surface During Chemical Mechanical Planarization, Jae-Gon Choi, Y. Prasad, In-Kwon Kim, In-Gon Kim, Woo-Jin Kim, Ahmed Busnaina, Jin-Goo Park
Jin-Goo Park
Scratch formation on patterned oxide wafers during the chemical mechanical planarization process was investigated. Silica and ceria slurries were used for polishing the experiments to observe the effect of abrasives on the scratch formation. Interlevel dielectric patterned wafers were used to study the scratch dimensions, and shallow trench isolation patterned wafers were used to study the effect of polishing parameters, such as pressure and rotational speed (head/platen). Similar shapes of scratches (chatter type) were observed with both types of slurries. The length of the scratch formed might be related to the period of contact between the wafer and the pad. …
Effect Of Different Deposition Mediums On The Adhesion And Removal Of Particles, S. Hu, Tae-Hoon Kim, Jin-Goo Park, Ahmed A. Busnaina
Effect Of Different Deposition Mediums On The Adhesion And Removal Of Particles, S. Hu, Tae-Hoon Kim, Jin-Goo Park, Ahmed A. Busnaina
Jin-Goo Park
The purpose of this study is to investigate the effect of the different deposition mediums on the adhesion and removal of particles. Polystyrene latex (PSL) particles (50 µm) are deposited on thermal oxide and silicon nitride coated silicon wafers using different suspension mediums: air, isopropyl alcohol (IPA), and deionized water and then removed in a dry environment. The results show that PSL particles deposited on oxide are easier to remove than those on nitride due to a higher van der Waals force in all deposition mediums. In addition, dry particles deposited in air are much easier to remove than those …