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Full-Text Articles in Nanoscience and Nanotechnology
Performance Projections For Ballistic Carbon Nanotube Field-Effect Transistors, Jing Guo, Mark Lundstrom, Supriyo Datta
Performance Projections For Ballistic Carbon Nanotube Field-Effect Transistors, Jing Guo, Mark Lundstrom, Supriyo Datta
Other Nanotechnology Publications
The performance limits of carbon nanotube field-effect transistors CNTFETs are examined theoretically by extending a one-dimensional treatment used for silicon metal – oxide – semiconductor field-effect transistors MOSFETs. Compared to ballistic MOSFETs, ballistic CNTFETs show similar I–V characteristics but the channel conductance is quantized. For low-voltage, digital applications, the CNTFET with a planar gate geometry provides an on-current that is comparable to that expected for a ballistic MOSFET. Significantly better performance, however, could be achieved with high gate capacitance structures. Because the computed performance limits greatly exceed the performance of recently reported CNTFETs, there is considerable opportunity for progress in …