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GAN NANOWIRES; DIFFRACTION CONTRAST; STACKING-FAULTS; NANOROD ARRAYS; EMISSION; SEMICONDUCTORS; LUMINESCENCE; EFFICIENCY; SHIFT; FILMS
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Full-Text Articles in Nanoscience and Nanotechnology
Iii-Nitride Nanopyramid Light Emitting Diodes Grown By Organometallic Vapor Phase Epitaxy, Isaac Wildeson, Robert Colby, David Ewoldt, Zhiwen Liang, Dmitri Zakharov, Nestor J. Zaluzec, R. Edwin García, E A. Stach, Timothy D. Sands
Iii-Nitride Nanopyramid Light Emitting Diodes Grown By Organometallic Vapor Phase Epitaxy, Isaac Wildeson, Robert Colby, David Ewoldt, Zhiwen Liang, Dmitri Zakharov, Nestor J. Zaluzec, R. Edwin García, E A. Stach, Timothy D. Sands
Birck and NCN Publications
Nanopyramid light emitting diodes (LEDs) have been synthesized by selective area organometallic vapor phase epitaxy. Self-organized porous anodic alumina is used to pattern the dielectric growth e templates via reactive ion etching, eliminating the need for lithographic processes. (In,Ga)N quantum well growth occurs primarily on the six {1 (1) over bar 01} semipolar facets of each of the nanopyramids, while coherent (In,Ga)N quantum dots with heights of up to similar to 20 nm are incorporated at the apex by controlling growth conditions. Transmission electron microscopy (TEM) indicates that the (In,Ga)N active regions of the nanopyramid heterostructures are completely dislocation-free. Temperature-dependent …