Nanoscience and Nanotechnology Commons^™

Ambipolar Graphene Field Effect Transistors By Local Metal Side Gates, J F. Tian, L A. Jauregui, G Lopez, H Cao, Yong P. Chen

Birck and NCN Publications

We demonstrate ambipolar graphene field effect transistors individually controlled by local metal side gates. The side gated field effect can have on/off ratio comparable with that of the global back gate, and can be tuned in a large range by the back gate and/or a second side gate. We also find that the side gated field effect is significantly stronger by electrically floating the back gate compared to grounding the back gate, consistent with the finding from electrostatic simulation.