Nanoscience and Nanotechnology Commons^™

Dynamic Through-Silicon Via Clustering In 3d Ic Floorplanning For Early Performance Optimization, Sucheta Mohapatra

Dissertations and Theses

Through-silicon via (TSV)-based three-dimensional integrated circuits (3D ICs) are expected to be the breakthrough technology for keeping up with the scaling trends of Moore's law, while also offering the unique opportunity for functional diversification through heterogenous integration. TSVs are vertical metal interconnects enabling communication across stacked and thinned dies. The dramatic reduction in global wirelength and chip footprint in 3DICs, directly improves delay, device density, bandwidth and routing congestion. Even with the current maturation of TSV process, the roadmap for industry adoption of 3DICs remains largely uncertain due to lack of standardized 3D tools capable of handling the sheer complexity …

Synthesis And Assessment Of Radiotherapy-Enhancing Nanoparticles, Hayden Winter

Dissertations and Theses

Radiation Therapy (RT) is a common treatment for cancerous lesions that acts by ionizing matter in the affected tissue, causing cell death. The disadvantage of RT is that it is most often delivered via an external beam of radiation which must pass through healthy tissues to reach the target site, ionizing matter within healthy tissues as well. To address this drawback, techniques are being developed for increasing RT-induced cell death in a target tissue while minimizing cell death in surrounding tissues. This effect is known as radiation dose enhancement or RT enhancement.

The approach to RT enhancement studied in this …

Enhanced Carrier Transport By Transition Metal Doping In Ws2 Field Effect Transistors, Maomao Liu, Sichen Wei, Simran Shahi, Hemendra Nath Jaiswal, Paolo Paletti, Sara Fathipour, Maja Remskar, Jun Jiao, Wansik Hwang, Fei Yao, Huamin Li

Physics Faculty Publications and Presentations

High contact resistance is one of the primary concerns for electronic device applications of two-dimensional (2D) layered semiconductors. Here, we explore the enhanced carrier transport through metal–semiconductor interfaces in WS₂ field effect transistors (FETs) by introducing a typical transition metal, Cu, with two different doping strategies: (i) a “generalized” Cu doping by using randomly distributed Cu atoms along the channel and (ii) a “localized” Cu doping by adapting an ultrathin Cu layer at the metal–semiconductor interface. Compared to the pristine WS₂ FETs, both the generalized Cu atomic dopant and localized Cu contact decoration can provide a Schottky-to-Ohmic contact …

Scanning Electron Microscopy (Sem) Investigation Of Morphology Changes In The Reduction Of Silica Nanoparticles To Elemental Silicon, Allison M. Cairns

University Honors Theses

The application of silicon nanoparticles varies from energy storage materials, to drug-delivery, and molecular recognition. Various chemical and physical properties of the Si nanoparticles arise from their morphology. This paper aims to reveal the morphology of Si nanoparticles following magnesiothermic reduction of silica (SiO₂) nanoparticles. Two sets of SiO₂ nanoparticles were used, commercially available NanoXact nanoparticles and laboratory-synthesized Stöber nanoparticles. A Zeiss Sigma VP FEG SEM was used to examine the morphology. Following the magnesiothermic reduction, the nanoparticles were etched with HF. Ten sets of images were taken of both Stöber and NanoXact nanoparticles: 1,2: the SiO …