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Full-Text Articles in Nanoscience and Nanotechnology
Statistical And Variational Modeling And Analysis Of Passive Integrated Photonic Devices, Norbert Dinyi Agbodo
Statistical And Variational Modeling And Analysis Of Passive Integrated Photonic Devices, Norbert Dinyi Agbodo
Legacy Theses & Dissertations (2009 - 2024)
The success of Si as a platform for photonic devices and the associated availabilityof wafer-scale, ultra-high resolution lithography for Si CMOS has helped lead to the rapid advance of Si-based integrated photonics manufacturing over the past decade. This evolution is nearing the point of integration of Si-based photonics together with Si-CMOS for compact, high speed, high bandwidth, and cost-effective devices. However, due to the sensitive nature of passive and active photonic devices, variations inherent in wafer-based fabrication processes can lead to unacceptable levels of performance variation both within a give die and across a given wafer. Fully understanding the role …
Mechanical Analysis Of A Heterogeneously Integrated Silicon Photonic Interposer, Erica Charlene Graham
Mechanical Analysis Of A Heterogeneously Integrated Silicon Photonic Interposer, Erica Charlene Graham
Legacy Theses & Dissertations (2009 - 2024)
Overcoming the bandwidth bottleneck in conventional interconnects necessitates transitioning to alternative scaling paradigms. Silicon (Si) photonics is considered a disruptive technology, capable of meeting the growing demands for higher bandwidth, low latency, and power efficiency. By leveraging the intrinsic properties of optical signals and manufacturing compatibility of Si, the co-integration of Si photonics and complementary-metal-oxide-semiconductor (CMOS) circuitry leading to terabit data speeds for next generation data communication can be realized. Heterogeneously integrating Si photonic functionality with well-established CMOS technology in an Si photonic interposer architecture simultaneously provides independent optimization as well as close integration of both technologies in one platform. …
Investigation Of Optical Second Harmonic Generation From Si (100) With Process Tailored Surface & Embedded Ag Nanostructures For Advanced Si Nonlinear Nanophotonics, Gourav Bhowmik
Legacy Theses & Dissertations (2009 - 2024)
The challenge of current microelectronic architecture in transmission bandwidth and power consumption can be potentially solved by using silicon photonics technologies that are compatible with modern CMOS fabrication. One of the critical active photonic devices for Si photonics is a Si based optical modulator. Most of the reported silicon modulators rely on the free carrier plasma dispersion effect. In those cases, a weak change of the refractive index obtained by carrier accumulation, injection or depletion is utilized in a Mach-Zehnder interferometer or a microring resonator to achieve intensity modulation, rendering them difficult for chip-level implementation due to a large footprint …
Novel Methods For The Crystallization Of Thin Film Silicon, Shane Mcmahon
Novel Methods For The Crystallization Of Thin Film Silicon, Shane Mcmahon
Legacy Theses & Dissertations (2009 - 2024)
Underpinning much of the technological innovation over the past few decades in the fields of sensors, lighting, displays, and energy conversion has been thin-film electronics. While many of the surfaces in our environment have curvature, silicon wafers do not. Flexible electronics attempt to overcome this fundamental limitation in form factor. Flexible thin-film transistors (TFTs) can be fabricated over large areas to provide switching and driving elements for displays and other devices. While printable organic semiconductors have made significant advances over the past few years, they cannot match the performance capability, electrical quality, temperature compatibility, or stability of silicon. For this …
Photonic Grating Coupler Designs For Optical Benching, Eng Wen Ong
Photonic Grating Coupler Designs For Optical Benching, Eng Wen Ong
Legacy Theses & Dissertations (2009 - 2024)
Background: Silicon Photonics has been rapidly developing as a field. The primary reason for this is its lower operating costs and faster switching rates for use in big data centres. Instead of microns-wide copper lines to transmit signals, silicon photonic chips use waveguides, usually of silicon or silicon nitride. Photonic signals bypass the issues of resistive-capacitance lag (RC-lag) and resistive-heating encountered by copper lines. Additionally, a single waveguide may transmit multiple signals along different carrier wavelengths.
Laser Direct Written Silicon Nanowires For Electronic And Sensing Applications, Woongsik Nam
Laser Direct Written Silicon Nanowires For Electronic And Sensing Applications, Woongsik Nam
Open Access Dissertations
Silicon nanowires are promising building blocks for high-performance electronics and chemical/biological sensing devices due to their ultra-small body and high surface-to-volume ratios. However, the lack of the ability to assemble and position nanowires in a highly controlled manner still remains an obstacle to fully exploiting the substantial potential of nanowires. Here we demonstrate a one-step method to synthesize intrinsic and doped silicon nanowires for device applications. Sub-diffraction limited nanowires as thin as 60 nm are synthesized using laser direct writing in combination with chemical vapor deposition, which has the advantages of in-situ doping, catalyst-free growth, and precise control of position, …
Tailoring The Optical Properties Of Silicon With Ion Beam Created Nanostructures For Advanced Photonics Applications, Perveen Akhter
Tailoring The Optical Properties Of Silicon With Ion Beam Created Nanostructures For Advanced Photonics Applications, Perveen Akhter
Legacy Theses & Dissertations (2009 - 2024)
In today’s fast life, energy consumption has increased more than ever and with that the demand for a renewable and cleaner energy source as a substitute for the fossil fuels has also increased. Solar radiations are the ultimate source of energy but harvesting this energy in a cost effective way is a challenging task. Si is the dominating material for microelectronics and photovoltaics. But owing to its indirect band gap, Si is an inefficient light absorber, thus requiring a thickness of solar cells beyond tens of microns which increases the cost of solar energy. Therefore, techniques to increase light absorption …
The Investigation Of Nanoscale Effects On Schottky Interfaces And The Scattering Rates Of High Resistivity Metals, Christopher Anthony Durcan
The Investigation Of Nanoscale Effects On Schottky Interfaces And The Scattering Rates Of High Resistivity Metals, Christopher Anthony Durcan
Legacy Theses & Dissertations (2009 - 2024)
Understanding the transport of electrons through materials and across interfaces is fundamental to modern day electronics. As electrons travel, interactions with defects within the crystal lattice induce scattering which gives rise to resistivity. At the interface between two materials, electrostatic barriers exist which can impede the flow of electrons. The work of this thesis is to further the understanding of electron transport by measuring the transport across metal-semiconductor interfaces at the nanoscale and measure scattering phenomena in metals. The measurement technique ballistic electron emission microscopy (BEEM) was used due to its ability to probe the scattering processes within a metal …
White-Light And Infrared Emission From Sicxoy-Based Materials, Vasileios Nikas
White-Light And Infrared Emission From Sicxoy-Based Materials, Vasileios Nikas
Legacy Theses & Dissertations (2009 - 2024)
The development of a Si-based light source has attracted a high level of attention due to its potential unique advantages. For one, the monolithic integration of photonics on on-chip level along with the microelectronics devices would enhance the data processing rate. Additionally the cost per transmitted/processed information capacity can be significantly reduced.
Modified Statistical Dynamical Diffraction Theory : A Novel Metrological Analysis Method For Partially Relaxed And Defective C Doped Si And Sige Heterostructures, Paul Kenneth Shreeman
Modified Statistical Dynamical Diffraction Theory : A Novel Metrological Analysis Method For Partially Relaxed And Defective C Doped Si And Sige Heterostructures, Paul Kenneth Shreeman
Legacy Theses & Dissertations (2009 - 2024)
The statistical dynamical diffraction theory, which has been initially developed by late Kato remained in obscurity for many years due to intense and difficult mathematical treatment that proved to be quite challenging to implement and apply. With assistance of many authors in past (including Bushuev, Pavlov, Pungeov, and among the others), it became possible to implement this unique x-ray diffraction theory that combines the kinematical (ideally imperfect) and dynamical (the characteristically perfect diffraction) into a single system of equations controlled by two factors determined by long range order and correlation function within the structure. The first stage is completed by …
Applications Of Raman Spectroscopy For Silicon Stress Characterization In Integrated Circuits, Colin Mcdonough
Applications Of Raman Spectroscopy For Silicon Stress Characterization In Integrated Circuits, Colin Mcdonough
Legacy Theses & Dissertations (2009 - 2024)
The introduction of mechanical stress in Si-based integrated circuits (ICs), whether desired or undesired, is intrinsic to IC fabrication. The origins are diverse and result from the numerous materials, geometries, and processes involved in fabrication. These stresses can lead to such effects as delamination, void formation and migration, and fracture, and can significantly affect device performance. As a result, stress development is a major concern for reliability, process control, and device design. It is necessary to investigate and characterize the origins and levels of the induced stresses. A more complete fundamental understanding of the evolution of stress in ICs and …