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Level Anticrossing Of Impurity States In Semiconductor Nanocrystals, Anvar S. Baimuratov, Ivan D. Rukhlenko, Vadim K. Turkov, Irina Ponomareva, Mikhail Yu Leonov, Tatiana S. Perova, Kevin Berwick, Alexander V. Baranov, Anatoly V. Federov

Articles

The size dependence of the quantized energies of elementary excitations is an essential feature of quantum nanostructures, underlying most of their applications in science and technology. Here we report on a fundamental property of impurity states in semiconductor nanocrystals that appears to have been overlooked—the anticrossing of energy levels exhibiting different size dependencies. We show that this property is inherent to the energy spectra of charge carriers whose spatial motion is simultaneously affected by the Coulomb potential of the impurity ion and the confining potential of the nanocrystal. The coupling of impurity states, which leads to the anticrossing, can be …