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Full-Text Articles in Nanoscience and Nanotechnology
Device Engineering Of Algan/Gan Hemts For Applications In Power-Electronic And Sensing, Isra Mahaboob
Device Engineering Of Algan/Gan Hemts For Applications In Power-Electronic And Sensing, Isra Mahaboob
Legacy Theses & Dissertations (2009 - 2024)
The research work presented in this Ph.D. thesis focuses on the engineering of AlGaN/GaN high electron mobility transistors (HEMTs) for the development of future device technology in power electronic and sensing applications.
Investigation Of Optical Second Harmonic Generation From Si (100) With Process Tailored Surface & Embedded Ag Nanostructures For Advanced Si Nonlinear Nanophotonics, Gourav Bhowmik
Legacy Theses & Dissertations (2009 - 2024)
The challenge of current microelectronic architecture in transmission bandwidth and power consumption can be potentially solved by using silicon photonics technologies that are compatible with modern CMOS fabrication. One of the critical active photonic devices for Si photonics is a Si based optical modulator. Most of the reported silicon modulators rely on the free carrier plasma dispersion effect. In those cases, a weak change of the refractive index obtained by carrier accumulation, injection or depletion is utilized in a Mach-Zehnder interferometer or a microring resonator to achieve intensity modulation, rendering them difficult for chip-level implementation due to a large footprint …
Exploring Gated Nanoelectronic Devices Fabricated From 1d And 2d Materials, Prathamesh A. Dhakras
Exploring Gated Nanoelectronic Devices Fabricated From 1d And 2d Materials, Prathamesh A. Dhakras
Legacy Theses & Dissertations (2009 - 2024)
One and two dimensional materials are being extensively researched toward potential application as ultra-thin body channel materials. The difficulty of implementing physical doping methods in these materials has necessitated various alternative doping schemes, the most promising of which is the electrostatic gating technique due to its reconfigurability. This dissertation explores the different fundamental devices that can be fabricated and characterized by taking advantage of the electrostatic gating of individual single-walled carbon nanotubes (SWNTs), dense SWNT networks and exfoliated 2D tungsten diselenide (WSe2) flakes.
Tetradymite Topological Insulators : Towards High Performance Broadband Photodetection, Asish Parbatani
Tetradymite Topological Insulators : Towards High Performance Broadband Photodetection, Asish Parbatani
Legacy Theses & Dissertations (2009 - 2024)
Topological insulators are characterized by the presence of a finite energy gap in the bulk state and a conducting metallic surface state consisting of odd number of Dirac cones. The conducting surface states are along the edge boundaries, free from disorders and are protected by time reversal symmetry. The presence of Dirac cone leads to universal optical absorption phenomenon like graphene. This phenomenon of universal optical absorption leads to frequency independent photoexcitation of carriers. Bi2Te3, Sb2Te3 and Bi2Se3 belong to tetradymite topological insulators (TTI) family and are often referred to as 3D layered materials. Theoretical predictions characterize TTIs by low …