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Full-Text Articles in Nanoscience and Nanotechnology
Control Over Variability In Nonvolatile Hafnium-Oxide Resistive-Switching Memory Based On Modeling Of The Switching Processes, Brian Jerad Butcher
Control Over Variability In Nonvolatile Hafnium-Oxide Resistive-Switching Memory Based On Modeling Of The Switching Processes, Brian Jerad Butcher
Legacy Theses & Dissertations (2009 - 2024)
Resistive random access memory (ReRAM) technology presents an attractive option for embedded non-volatile (NV) memory systems if its variability (cycle-to-cycle and device-to-device) can be controlled. This dissertation has focused on investigations to identify key mechanisms and parameters which dominate ReRAM variability, and the development of subsequent experimental and simulation-based tools to address this variability. The first component of these efforts entailed identification of the modern-day non-volatile memory technological gaps that have driven the operational requirements and challenges for resistive memory as an emerging NV memory.
Probe Immobilization Strategies And Device Optimization For Novel Transistor-Based Dna Sensors, Nicholas Michael Fahrenkopf
Probe Immobilization Strategies And Device Optimization For Novel Transistor-Based Dna Sensors, Nicholas Michael Fahrenkopf
Legacy Theses & Dissertations (2009 - 2024)
The research presented herein exploits the terminal phosphate group on single stranded DNA molecules for direct immobilization to surfaces utilized in semiconductor device fabrication with the end goal of transistor based DNA sensors. As a demonstration of the feasibility of this immobilization strategy DNA immobilization to a variety of surfaces was evaluated for usefulness in biosensor applications. It was determined that DNA can be directly immobilized to a variety of semiconductor surfaces through the terminal phosphate group. Further, this immobilization allows for the hybridization of the immobilized DNA to complementary target in solution. The immobilization of DNA to hafnium dioxide …
Impacts Of Ion Irradiation On Hfo2-Based Resistive Random Access Memory Devices, Xiaoli He
Impacts Of Ion Irradiation On Hfo2-Based Resistive Random Access Memory Devices, Xiaoli He
Legacy Theses & Dissertations (2009 - 2024)
The impacts of ion irradiation on so-called vacancy-change mechanism (VCM) and electrochemical-metallization mechanism (ECM) ReRAM devices based on HfO2 are investigated using various ion sources: H+ (1 MeV), He+ (1 MeV), N+ (1MeV), Ne+ (1.6 MeV) and Ar+ (2.75 MeV) over a range of total doses (105 - 1011 rad(Si)) and fluences (1012 - 1015 cm-2). VCM-ReRAM devices show robust resistive switching function after all irradiation experiments. VCM resistive switching parameters including set voltage (Vset), reset voltage (Vreset), on-state resistance (Ron) and off-state resistance (Roff) exhibited, in most cases, modest changes …