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Full-Text Articles in Nanoscience and Nanotechnology
1/F Noise In Carbon Nanotube Devices - On The Impact Of Contacts And Device Geometry, Joerg Appenzeller, Yu-Ming Lin, Joachim Knoch, Zhihong Chen, Phaedon Avouris
1/F Noise In Carbon Nanotube Devices - On The Impact Of Contacts And Device Geometry, Joerg Appenzeller, Yu-Ming Lin, Joachim Knoch, Zhihong Chen, Phaedon Avouris
Other Nanotechnology Publications
We report on the 1/f noise in various ballistic carbon nanotube devices. A common means to characterize the quality of a transistor in terms of noise is to evaluate the ratio of the noise amplitude A and the sample resistance R. By contacting semiconducting tubes with different metal electrodes we are able to show that a small A/R value by itself is no indication of a suitable metal/tube combination for logic applications. We discuss how current in a nanotube transistor is determined by the injection of carriers at the electrode/nanotube interface, while at the same time excess noise is related …