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Articles 1 - 13 of 13
Full-Text Articles in Nanoscience and Nanotechnology
Growth Of Epitaxial Graphene On Single Crystal Copper Surfaces By Chemical Vapor Deposition, Tyler Rutley Mowll
Growth Of Epitaxial Graphene On Single Crystal Copper Surfaces By Chemical Vapor Deposition, Tyler Rutley Mowll
Legacy Theses & Dissertations (2009 - 2024)
Graphene is of significant interest due to its unique properties, such as high carrier mobility, mechanical strength, and thermal conductivity. Potential applications include next generation transistors, interconnects, biological and chemical sensing devices, and super capacitors. The research presented here addresses unresolved questions regarding the nucleation and growth of graphene by chemical vapor deposition (CVD) on the high index surfaces of copper single crystals. While much CVD graphene growth has been performed on copper foils, the polycrystalline nature of the foils renders large-scale single domain growth of graphene difficult. For this reason, many groups seek to reduce the nucleation rate of …
Modeling And Studying The Effect Of Texture And Elastic Anisotropy Of Copper Microstructure In Nanoscale Interconnects On Reliability In Integrated Circuits, Adarsh Basavalingappa
Modeling And Studying The Effect Of Texture And Elastic Anisotropy Of Copper Microstructure In Nanoscale Interconnects On Reliability In Integrated Circuits, Adarsh Basavalingappa
Legacy Theses & Dissertations (2009 - 2024)
Copper interconnects are typically polycrystalline and follow a lognormal grain size distribution. Polycrystalline copper interconnect microstructures with a lognormal grain size distribution were obtained with a Voronoi tessellation approach. The interconnect structures thus obtained were used to study grain growth mechanisms, grain boundary scattering, scattering dependent resistance of interconnects, stress evolution, vacancy migration, reliability life times, impact of orientation dependent anisotropy on various mechanisms, etc. In this work, the microstructures were used to study the impact of microstructure and elastic anisotropy of copper on thermal and electromigration induced failure.
Doped Tio2 Nanowires For Applications In Dye Sensitized Solar Cells And Sacrifical Hydrogen Production, Qasem Alsharari
Doped Tio2 Nanowires For Applications In Dye Sensitized Solar Cells And Sacrifical Hydrogen Production, Qasem Alsharari
Electronic Thesis and Dissertation Repository
This thesis explores the synthesis of metal oxide 1-D nanowires using a sol-gel method in supercritical carbon dioxide (sc-CO2), as an environmental friendly enabling solvent. Porous nanowires were synthesized and their performance was tested in dye sensitized solar cell and sacrifical hydrogen production. Titanium isopropoxide (TIP) was used as a precursor for titania synthesis while copper, bismuth and indium were examined as dopants, respectively. The sol-gel reactions were catalyzed by acetic acid in CO2 at a temperature of 60 °C and pressure of 5000 psi. It was observed that acetic acid/monomer ratio > 4 produced nanowires while a …
Development Of Low-Temperature Atomic Layer Deposition Of Ultra-Thin Ruco Direct Plate Liners For Flexible Electronics Applications, Dillon Alexander Gregory
Development Of Low-Temperature Atomic Layer Deposition Of Ultra-Thin Ruco Direct Plate Liners For Flexible Electronics Applications, Dillon Alexander Gregory
Legacy Theses & Dissertations (2009 - 2024)
Low temperature plasma-assisted atomic layer deposition-grown metal nanocomposite layers based on mixtures of ruthenium and cobalt have been investigated as potential copper adhesion/barrier layers in flexible electronics applications. The success of adapting this process to flexible electronics depends on the candidate barriers meeting several necessary properties including sufficient electrical conductivity, compatibility with Cu electroplating, and ability to prevent Cu diffusion into the substrate. Preliminary testing has shown that atomic layer deposition (ALD) can be used as a technique for depositing alloyed metallic barrier layers at the lower thermal constraints dictated by the use of polymer substrates and still produce continuous …
Texture And Microstructure Of Ipvd Copper Manganese Seed In 1 Μm & 70 Nm Wide Damascene Trenches, Robert Stuart Brown
Texture And Microstructure Of Ipvd Copper Manganese Seed In 1 Μm & 70 Nm Wide Damascene Trenches, Robert Stuart Brown
Legacy Theses & Dissertations (2009 - 2024)
This thesis describes the grain texture and microstructure of Ionized Physical Vapor Deposition (iPVD) Copper Manganese seed in 1 µm and 70 nm wide damascene trenches. Using Transmission Electron Microscopy (TEM) imaging and diffraction pattern analysis, the grain size and general orientation of the grains were determined. It was found that the 1 µm wide trenches contained larger grains and more texture than that of the 70 nm wide trenches. While this thesis builds upon previous work by Brendan O’Brien in the Dunn group, one significantly different finding will be presented regarding the structure on the sidewall of the trenches. …
Alloy Solute Interactions At Grain Boundaries And Nanoscale Interfaces In Copper, Luke Prestowitz
Alloy Solute Interactions At Grain Boundaries And Nanoscale Interfaces In Copper, Luke Prestowitz
Nanoscale Science & Engineering (discontinued with class year 2014)
To study grain boundary solute interactions we have developed recipes for co-electrodeposition of dilute copper alloys including Cu(Ni) and Cu(Co). Secondary Ion Mass Spectrometry (SIMS) was used to analyze the incorporation of solute into the copper film. In addition to the co-electrodeposition process we also used a drive-in diffusion model for Au, Ag, Co, and Ni. Atomic imaging in a scanning transmission electron microscope (STEM) was used to visualize and investigate solute at grain boundaries and interfaces in polygranular copper films. By understanding these interactions and pathways of alloying solutes in copper microstructures, we can more accurately predict alloying behavior …
The Impact Of Seed Layer Structure On The Recrystallization Of Ecd Cu And Its Alloys, Brendan B. O'Brien
The Impact Of Seed Layer Structure On The Recrystallization Of Ecd Cu And Its Alloys, Brendan B. O'Brien
Legacy Theses & Dissertations (2009 - 2024)
Despite the significant improvements originally offered by the use of Cu over Al as the interconnect material for semiconductor devices, the continued down-scaling of interconnects has presented significant challenges for semiconductor engineers. As the metal line widths shrink, both the conductivity and reliability of lines decrease due to a stubbornly fine-grained microstructure in narrow lines.
The Influence Of Impurities And Metallic Capping Layers On The Microstructure Of Copper Interconnects, Michael Rizzolo
The Influence Of Impurities And Metallic Capping Layers On The Microstructure Of Copper Interconnects, Michael Rizzolo
Legacy Theses & Dissertations (2009 - 2024)
As copper interconnects have scaled to ever smaller dimensions on semiconductor devices, the microstructure has become increasingly detrimental for performance and reliability. Small grains persist in interconnects despite annealing at high temperatures, leading to higher line resistance and more frequent electromigration-induced failures. Conventionally, it was believed that impurities from the electrodeposition pinned grain growth, but limitations in analytical techniques meant the effect was inferred rather than observed.
Synthesis Of Platinum And Platinum-Copper Branched Nanoparticles For Electrooxidation Of Methanol, Eric Courtland Taylor
Synthesis Of Platinum And Platinum-Copper Branched Nanoparticles For Electrooxidation Of Methanol, Eric Courtland Taylor
Graduate Theses and Dissertations
Platinum and Pt alloys are among the most important heterogeneous catalysts for many organic reactions and electrochemical reactions associated with the fuel cell technologies. How to reduce Pt usage while maintaining the performance of the catalysts becomes a subject for intensive research in materials chemistry. For heterogeneous catalysis, the catalytic reactivity and selectivity are strongly correlated with different crystallographic facets exposed on the surface. The facets with high-index planes whose Miller indices with at one is larger than unity are generally more active than those with low-index planes (e.g., {100}, {111}, and {110}). Tuning the morphology of the nanoparticles to …
Plasma-Enhanced Atomic Layer Deposition Of Ruthenium-Titanium Nitride Mixed-Phase Layers For Direct-Plate Liner And Copper Diffusion Barrier Applications, Adam James Gildea
Plasma-Enhanced Atomic Layer Deposition Of Ruthenium-Titanium Nitride Mixed-Phase Layers For Direct-Plate Liner And Copper Diffusion Barrier Applications, Adam James Gildea
Legacy Theses & Dissertations (2009 - 2024)
Current interconnect networks in semiconductor processing utilize a sputtered TaN diffusion barrier, Ta liner, and Cu seed to improve the adhesion, microstructure, and electromigration resistance of electrochemically deposited copper that fills interconnect wires and vias. However, as wire/via widths shrink due to device scaling, it becomes increasingly difficult to have the volume of a wire/via be occupied with ECD Cu which increases line resistance and increases the delay in signal propagation in IC chips. A single layer that could serve the purpose of a Cu diffusion barrier and ECD Cu adhesion promoter could allow ECD Cu to occupy a larger …
Properties Of Peg, Ppg And Their Copolymers Influence On The Gap-Fill Characteristics Of Damascene Interconnects, Kevin Ryan
Legacy Theses & Dissertations (2009 - 2024)
A laboratory scale plating cell was built that provided reproducible bottom-up fill results for the electrochemical deposition of copper in damascene features. Several techniques used in the full wafer plating tool were incorporated into the setup to accurately control the process conditions. These techniques included but were not limited to a voltage controlled `hot-entry' step, a custom coupon holder to allow sample rotation, a secondary thief electrode and an automatic entry system. The results of qualification experiments are presented to demonstrate that precise control was realized along with repeatable partial fill plating results. The qualified setup was then used to …
The Influence Of Copper Substrate Orientation On Graphene Growth, Zachary Robert Robinson
The Influence Of Copper Substrate Orientation On Graphene Growth, Zachary Robert Robinson
Legacy Theses & Dissertations (2009 - 2024)
This dissertation is focused on determining the influence of the copper substrate on graphene grown by \ac{CVD}. Graphene, which can be grown in single atomic layers on copper substrates, has potential applications in future electronic devices. One of the key issues for the use of graphene grown by chemical vapor deposition for device applications is the influence of defects on the transport properties of the graphene. For instance, growth on metal foil substrates results in multi-domain graphene growth because the foil substrates themselves have a variety of different surface terminations. Therefore, they don't serve as a very good template for …
Investigation Of Novel Alumina Nanoabrasive And The Interactions With Basic Chemical Components In Copper Chemical Mechanical Planarization (Cmp) Slurries, Shravanthi Lakshmi Manikonda
Investigation Of Novel Alumina Nanoabrasive And The Interactions With Basic Chemical Components In Copper Chemical Mechanical Planarization (Cmp) Slurries, Shravanthi Lakshmi Manikonda
Legacy Theses & Dissertations (2009 - 2024)
Chemical mechanical planarization (CMP) is an enabling process technology for IC fabrication to maintain global planarity across the wafer to satisfy lithographic depth of focus constraints. It also enables integration of materials that cannot be anisotropically etched, such as Cu. CMP utilizes nanoparticle abrasives in aqueous slurry to aid in planarization.