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Gesn Thin Film Epitaxy And Quantum Wells For Optoelectronic Devices, Perry Christian Grant Dec 2018

Gesn Thin Film Epitaxy And Quantum Wells For Optoelectronic Devices, Perry Christian Grant

Graduate Theses and Dissertations

Group IV photonics is an effort to generate viable infrared optoelectronic devices using group IV materials. Si-based optoelectronics have received monumental research since Si is the heart of the electronics industry propelling our data driven world. Silicon however, is an indirect material whose optical characteristics are poor compared to other III-IV semiconductors that make up the optoelectronics industry. There have been major efforts to integrate III-V materials onto Si substrates. Great progress on the integration of these III-V materials has occurred but incompatibility with CMOS processing has presented great difficulty in this process becoming a viable and cost-effective solution. Germanium …


Growth Of Epitaxial Graphene On Single Crystal Copper Surfaces By Chemical Vapor Deposition, Tyler Rutley Mowll Jan 2018

Growth Of Epitaxial Graphene On Single Crystal Copper Surfaces By Chemical Vapor Deposition, Tyler Rutley Mowll

Legacy Theses & Dissertations (2009 - 2024)

Graphene is of significant interest due to its unique properties, such as high carrier mobility, mechanical strength, and thermal conductivity. Potential applications include next generation transistors, interconnects, biological and chemical sensing devices, and super capacitors. The research presented here addresses unresolved questions regarding the nucleation and growth of graphene by chemical vapor deposition (CVD) on the high index surfaces of copper single crystals. While much CVD graphene growth has been performed on copper foils, the polycrystalline nature of the foils renders large-scale single domain growth of graphene difficult. For this reason, many groups seek to reduce the nucleation rate of …