Nanoscience and Nanotechnology Commons^™

Skynet: Memristor-Based 3d Ic For Artificial Neural Networks, Sachin Bhat

Masters Theses

Hardware implementations of artificial neural networks (ANNs) have become feasible due to the advent of persistent 2-terminal devices such as memristor, phase change memory, MTJs, etc. Hybrid memristor crossbar/CMOS systems have been studied extensively and demonstrated experimentally. In these circuits, memristors located at each cross point in a crossbar are, however, stacked on top of CMOS circuits using back end of line processing (BOEL), limiting scaling. Each neuron’s functionality is spread across layers of CMOS and memristor crossbar and thus cannot support the required connectivity to implement large-scale multi-layered ANNs.

This work proposes a new fine-grained 3D integrated circuit technology …

Nanoscale Investigations Of Thermal And Momentum Transport In Graphene – Water Systems, Drew Champion Marable

Masters Theses

Demand for miniaturized electronic devices has given rise to new challenges in thermal management. Integration with graphene, a two-dimensional (2D) material with excellent thermal properties, allows for further reduced sizes and combats thermal management issues within novel devices. Moreover, due to its wide availability and adequate thermal properties, liquid water is commonly used within traditional thermal systems to enhance cooling performance; as such, water is expected to yield similar performance in smaller-scale applications. However, at reduced sizes descending to the nanoscale realm, system behaviors deviate from traditional macroscale-based theory as interfacial effects become amplified. Employing insight provided by molecular dynamics …

High Performance Silver Diffusive Memristors For Future Computing, Rivu Midya

Masters Theses

Sneak path current is a significant remaining obstacle to the utilization of large crossbar arrays for non-volatile memories and other applications of memristors. A two-terminal selector device with an extremely large current-voltage nonlinearity and low leakage current could solve this problem. We present here a Ag/oxide-based threshold switching (TS) device with attractive features such as high current-voltage nonlinearity (~10¹⁰), steep turn-on slope (less than 1 mV/dec), low OFF-state leakage current (~10^-14 A), fast turn ON/OFF speeds (<75/250 ns), and good endurance (>10⁸ cycles). The feasibility of using this selector with a typical memristor has been demonstrated by physically integrating them …