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Full-Text Articles in Nanoscience and Nanotechnology
Understanding Defect Interactions In Si Ultra-Shallow P-N Junctions Formed By Very Low Energy Boron Implantation, Lakshmanan H. Vanamurthy
Understanding Defect Interactions In Si Ultra-Shallow P-N Junctions Formed By Very Low Energy Boron Implantation, Lakshmanan H. Vanamurthy
Legacy Theses & Dissertations (2009 - 2024)
One of the biggest challenges in the scaling of CMOS devices is the formation of a highly activated, abrupt, defect free Source drain extension (SDE) region. This is especially difficult with p-FET's because of the (1) Boron diffusion co-efficient enhancement from Transient enhanced diffusion (TED) and (2) low solid solubility of