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Full-Text Articles in Nanoscience and Nanotechnology
Investigation Of Device Parameters For Field-Effect Dna-Sensors By Three-Dimensional Simulation, Eddie Howell, Clemens Heitzinger, Gerhard Klimeck
Investigation Of Device Parameters For Field-Effect Dna-Sensors By Three-Dimensional Simulation, Eddie Howell, Clemens Heitzinger, Gerhard Klimeck
Other Nanotechnology Publications
The development of a DNA field-effect transistor (DNAFET) simulator is described and implications on device structure and future experiments are discussed. In DNAFETs the gate structure is replaced by a layer of immobilized single-stranded DNA molecules which act as surface probe molecules [1, 2]. When complementary DNA strands bind to the receptors, the charge distribution near the surface of the device changes, modulating current transport through the device and enabling detection (cf. Fig. 1 and 5). Arrays of DNAFETs can be used for detecting singlenucleotide polymorphisms and for DNA sequencing. The advantage of DNAFETs over optical methods of detection is …
Ballisticity Of Nanotube Field-Effect Transistors: Role Of Phonon Energy And Gate Bias, Siyuranga O. Koswatta, Sayed Hasan, Mark S. Lundstrom, M. P. Anantram, Dmitri E. Nikonov
Ballisticity Of Nanotube Field-Effect Transistors: Role Of Phonon Energy And Gate Bias, Siyuranga O. Koswatta, Sayed Hasan, Mark S. Lundstrom, M. P. Anantram, Dmitri E. Nikonov
Other Nanotechnology Publications
We investigate the role of electron-phonon scattering and gate bias in degrading the drive current of nanotube field-effect transistors (FETs). Optical phonon scattering significantly decreases the drive current only when gate voltage is higher than a well-defined threshold. For comparable electron-phonon coupling, a lower phonon energy leads to a larger degradation of drive current. Thus in semiconductor nanowire FETs, the drive current will be more sensitive than in carbon nanotube FETs because of the smaller phonon energies in semiconductors. Acoustic phonons and other elastic scattering mechanisms are most detrimental to nanotube FETs irrespective of biasing conditions.