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Full-Text Articles in Nanoscience and Nanotechnology
Exploring Gated Nanoelectronic Devices Fabricated From 1d And 2d Materials, Prathamesh A. Dhakras
Exploring Gated Nanoelectronic Devices Fabricated From 1d And 2d Materials, Prathamesh A. Dhakras
Legacy Theses & Dissertations (2009 - 2024)
One and two dimensional materials are being extensively researched toward potential application as ultra-thin body channel materials. The difficulty of implementing physical doping methods in these materials has necessitated various alternative doping schemes, the most promising of which is the electrostatic gating technique due to its reconfigurability. This dissertation explores the different fundamental devices that can be fabricated and characterized by taking advantage of the electrostatic gating of individual single-walled carbon nanotubes (SWNTs), dense SWNT networks and exfoliated 2D tungsten diselenide (WSe2) flakes.
The Investigation Of Nanoscale Effects On Schottky Interfaces And The Scattering Rates Of High Resistivity Metals, Christopher Anthony Durcan
The Investigation Of Nanoscale Effects On Schottky Interfaces And The Scattering Rates Of High Resistivity Metals, Christopher Anthony Durcan
Legacy Theses & Dissertations (2009 - 2024)
Understanding the transport of electrons through materials and across interfaces is fundamental to modern day electronics. As electrons travel, interactions with defects within the crystal lattice induce scattering which gives rise to resistivity. At the interface between two materials, electrostatic barriers exist which can impede the flow of electrons. The work of this thesis is to further the understanding of electron transport by measuring the transport across metal-semiconductor interfaces at the nanoscale and measure scattering phenomena in metals. The measurement technique ballistic electron emission microscopy (BEEM) was used due to its ability to probe the scattering processes within a metal …
Fundamental Studies Of Supported Graphene Interfaces : Defect Density Of States In Graphene Field Effect Transistors (Fets) And Ideal Graphene - Silicon Schottky Diodes, Dhiraj Sinha
Legacy Theses & Dissertations (2009 - 2024)
The physics of transport in atomically thin 2D materials is an active area of research, important for understanding fundamental properties of reduced dimensional materials and for applications. New phenomena based on graphene may include properties of topologically protected insulators. Applications of these materials are envisioned in electronics, optoelectronics and spintronics.
Towards A Fundamental Understanding Of Inhomogeneous Interfaces Utilizing Ballistic Electron Emission Microscopy, Robert John Balsano
Towards A Fundamental Understanding Of Inhomogeneous Interfaces Utilizing Ballistic Electron Emission Microscopy, Robert John Balsano
Legacy Theses & Dissertations (2009 - 2024)
A fundamental understanding of charge transport across metal/semiconductor interfaces is of great technological and scientific importance. Metal/semiconductor, or Schottky barrier devices are widely utilized in sensing applications and power electronics. Additionally, Schottky barriers appear in resistive memory technology and current transistor technology. Although Schottky interfaces are ubiquitous, the effects of spatially variant interfaces on the measured Schottky barrier height (SBH) are not entirely understood. For these reasons it is necessary to explore the spatial variation at Schottky interfaces at the nanoscale. Ballistic electron emission microscopy (BEEM) is a three terminal scanning tunneling microscopy (STM) technique used to measure hot carrier …
Electrical And Optical Characterization Of Carbon Nanotube Diodes, Argyrios Malapanis
Electrical And Optical Characterization Of Carbon Nanotube Diodes, Argyrios Malapanis
Legacy Theses & Dissertations (2009 - 2024)
Carbon nanotubes are good candidates for future applications, including nanoelectronic and nanophotonic devices. Their quasi-one dimensional (1D) character offers appealing device properties. These include reduced carrier scattering, carrier mobility up to two orders of magnitude higher than that of materials used in state-of-the-art computer chips today, current densities rivaling those of the best semiconductors, enhanced optical absorption, and band gaps tunable with tube diameter and doping. Recent breakthroughs in research point to the possibility of placing nanotubes precisely on substrates with densities approaching that of transistors on today's computer chips in a way that's integratable with existing Si-based technology. Such …