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University at Albany, State University of New York

Theses/Dissertations

2019

Articles 1 - 11 of 11

Full-Text Articles in Nanoscience and Nanotechnology

Device Engineering Of Algan/Gan Hemts For Applications In Power-Electronic And Sensing, Isra Mahaboob May 2019

Device Engineering Of Algan/Gan Hemts For Applications In Power-Electronic And Sensing, Isra Mahaboob

Legacy Theses & Dissertations (2009 - 2024)

The research work presented in this Ph.D. thesis focuses on the engineering of AlGaN/GaN high electron mobility transistors (HEMTs) for the development of future device technology in power electronic and sensing applications.

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Development And Demonstration Of A Processing And Assembly Pathway For A 3d-Synchronous Field Programmable Gate Array, Robert Carroll Jan 2019

Development And Demonstration Of A Processing And Assembly Pathway For A 3d-Synchronous Field Programmable Gate Array, Robert Carroll

Legacy Theses & Dissertations (2009 - 2024)

Field Programmable Gate Arrays (FPGA) are integrated circuits which can implement virtually any digital function and can be configured by a designer after manufacturing. This is beneficial when dedicated application specific runs are not time or cost effective; however, this flexibility comes at the cost of a substantially higher interconnect overhead. Three-dimensional (3D) integration can offer significant improvements in the FPGA architecture by stacking multiple device layers and interconnecting them in the third or vertical dimension, through the substrate, where path lengths are greatly reduced. This will allow for a higher density of devices and improvements in power consumption, signal …

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Mechanistic Investigation Of Antimony Carboxylate Photoresists For Euv Lithography, Michael Murphy Jan 2019

Mechanistic Investigation Of Antimony Carboxylate Photoresists For Euv Lithography, Michael Murphy

Legacy Theses & Dissertations (2009 - 2024)

In 2019, Extreme Ultraviolet (EUV) lithography begins its integration into high volume manufacturing to replace 193-nm lithography at key steps in the fabrication of integrated circuits. To achieve the requirements of the 7- and 5-nm nodes, a new photoresist technology is required to replace traditional chemically-amplified photoresists (CAR). One novel technology incorporates metal atoms with high EUV absorptivity into the photoresist. In this work, we describe the development, evaluation and mechanistic investigation of triorganoantimony(V) dicarboxylate complexes as novel photoresists for EUV lithography.

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Partitioning Of Defect Sources And Defects Reduction In Euv Mask Blank Multilayer Deposition, Alin O. Antohe Jan 2019

Partitioning Of Defect Sources And Defects Reduction In Euv Mask Blank Multilayer Deposition, Alin O. Antohe

Legacy Theses & Dissertations (2009 - 2024)

Extreme ultraviolet lithography (EUVL) is the next-generation lithography technology and is slated to replace 193-nanometer argon fluoride (ArF) lithography. EUVL uses 13.5-nanometer wavelength light to expose the photoresist. In doing so it enables the technological achievement of 20-nanometer half-pitch circuits which cannot be achieved with conventional 193-nanometer optical lithography.

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Investigation Of Optical Second Harmonic Generation From Si (100) With Process Tailored Surface & Embedded Ag Nanostructures For Advanced Si Nonlinear Nanophotonics, Gourav Bhowmik Jan 2019

Investigation Of Optical Second Harmonic Generation From Si (100) With Process Tailored Surface & Embedded Ag Nanostructures For Advanced Si Nonlinear Nanophotonics, Gourav Bhowmik

Legacy Theses & Dissertations (2009 - 2024)

The challenge of current microelectronic architecture in transmission bandwidth and power consumption can be potentially solved by using silicon photonics technologies that are compatible with modern CMOS fabrication. One of the critical active photonic devices for Si photonics is a Si based optical modulator. Most of the reported silicon modulators rely on the free carrier plasma dispersion effect. In those cases, a weak change of the refractive index obtained by carrier accumulation, injection or depletion is utilized in a Mach-Zehnder interferometer or a microring resonator to achieve intensity modulation, rendering them difficult for chip-level implementation due to a large footprint …

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Exploring Gated Nanoelectronic Devices Fabricated From 1d And 2d Materials, Prathamesh A. Dhakras Jan 2019

Exploring Gated Nanoelectronic Devices Fabricated From 1d And 2d Materials, Prathamesh A. Dhakras

Legacy Theses & Dissertations (2009 - 2024)

One and two dimensional materials are being extensively researched toward potential application as ultra-thin body channel materials. The difficulty of implementing physical doping methods in these materials has necessitated various alternative doping schemes, the most promising of which is the electrostatic gating technique due to its reconfigurability. This dissertation explores the different fundamental devices that can be fabricated and characterized by taking advantage of the electrostatic gating of individual single-walled carbon nanotubes (SWNTs), dense SWNT networks and exfoliated 2D tungsten diselenide (WSe2) flakes.

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Secondary Electron Interactions In Exposures Of Euv Photoresists, Steven Grzeskowiak Jan 2019

Secondary Electron Interactions In Exposures Of Euv Photoresists, Steven Grzeskowiak

Legacy Theses & Dissertations (2009 - 2024)

The microelectronic industry’s movement toward smaller feature sizes has necessitated a shift to extreme ultraviolet (EUV) lithography to enable cost-effective patterning of sub 20-nm features. However, this shift from 193-nm lithography (6.4 eV) to EUV (13.5 nm, 92 eV) poses significant obstacles, such that photolithography is now operating in an energy range above the electron binding energies of common atomic species in photoresists. This significant energy increase means the chemical reactions happening within operate in the realm of radiation chemistry instead of photochemistry since the observed reactions are due almost entirely to the action of photoelectrons as they dissipate their …

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Stem Education : A Programmatic And Economic Analysis, Rebecca Kate Laforest Jan 2019

Stem Education : A Programmatic And Economic Analysis, Rebecca Kate Laforest

Legacy Theses & Dissertations (2009 - 2024)

Innovations of the 21st century have created a need for a highly skilled and adaptable workforce. In this search, industry representatives are having a difficult time finding highly qualified US candidates. From private firms to public officials and economic analysts to educators, many acknowledge the need to update training and education to better prepare our future workforce. This work will examine the performance of students in the United States, the current employment landscape, the evolution of education in the US, and trends in education to support college and career preparation. This work will then analyze specific facets of new educational …

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Electron Transport In One And Two Dimensional Materials, Samuel William Lagasse Jan 2019

Electron Transport In One And Two Dimensional Materials, Samuel William Lagasse

Legacy Theses & Dissertations (2009 - 2024)

This dissertation presents theoretical and experimental studies in carbon nanotubes (CNTs), graphene, and van der Waals heterostructures. The first half of the dissertation focuses on cutting edge tight-binding-based quantum transport models which are used to study proton irradiation-induced single-event effects in carbon nanotubes [1], total ionizing dose effects in graphene [2], quantum hall effect in graded graphene p-n junctions [3], and ballistic electron focusing in graphene p-n junctions [4]. In each study, tight-binding models are developed, with heavy emphasis on tying to experimental data. Once benchmarked against experiment, properties of each system which are difficult to access in the laboratory, …

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Tetradymite Topological Insulators : Towards High Performance Broadband Photodetection, Asish Parbatani Jan 2019

Tetradymite Topological Insulators : Towards High Performance Broadband Photodetection, Asish Parbatani

Legacy Theses & Dissertations (2009 - 2024)

Topological insulators are characterized by the presence of a finite energy gap in the bulk state and a conducting metallic surface state consisting of odd number of Dirac cones. The conducting surface states are along the edge boundaries, free from disorders and are protected by time reversal symmetry. The presence of Dirac cone leads to universal optical absorption phenomenon like graphene. This phenomenon of universal optical absorption leads to frequency independent photoexcitation of carriers. Bi2Te3, Sb2Te3 and Bi2Se3 belong to tetradymite topological insulators (TTI) family and are often referred to as 3D layered materials. Theoretical predictions characterize TTIs by low …

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Cvd Molybdenum Disulfide : Material And Device Engineering, Eui Sang Song Jan 2019

Cvd Molybdenum Disulfide : Material And Device Engineering, Eui Sang Song

Legacy Theses & Dissertations (2009 - 2024)

Molybdenum disulfide (MoS2) is a semiconducting 2D layered material that has attracted a lot of attention due to its material properties for electronics and optoelectronics device applications. These include a layer-dependent band gap, an indirect to direct energy transition at monolayer state, and strong light-matter interaction. A large majority of 2D materials and devices have been studied through micromechanical exfoliation for extraction and electron beam lithography for device fabrication. These methodologies while able to generate high quality materials and precisely fabricated devices, are not suitable for large scale production. Efforts have been made to make MoS2 and other 2D materials …

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