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University at Albany, State University of New York

Theses/Dissertations

2017

RRAM

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Full-Text Articles in Nanoscience and Nanotechnology

Resistive Random Access Memory From Materials Development And Engineering To Novel Encryption And Neuromorphic Applications, Karsten Beckmann Jan 2017

Resistive Random Access Memory From Materials Development And Engineering To Novel Encryption And Neuromorphic Applications, Karsten Beckmann

Legacy Theses & Dissertations (2009 - 2024)

Resistive random access memory (ReRAM or RRAM) is a novel form of non-volatile memory that is expected to play a major role in future computing and memory solutions. It has been shown that the resistance state of ReRAM devices can be precisely tuned by modulating switching voltages, by limiting peak current, and by adjusting the switching pulse properties. This enables the realization of novel applications such as memristive neuromorphic computing and neural network computing. I have developed two processes based on 100 and 300mm wafer platforms to demonstrate functional HfO2 based ReRAM devices. The first process is designed for a …