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Component Mode Synthesis Approach For Quantum Mechanical Electrostatic And Transport Analysis Of Nanoscale Structures And Devices, Zhe Gao

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As the dimensions of commonly used semiconductor devices have shrunk into nanometer regime, it is recognized that the influence of quantum effects on their electrostatic and transport properties cannot be ignored. In the past few decades, various computational models and approaches have been developed to analyze these properties in nanostructures and devices. Among these computational models, the Schršdinger-Poisson model has been widely adopted for quantum mechanical electrostatic and transport analysis of nanostructures and devices such as quantum wires, metal-oxide-semiconductor field effect transistors (MOSFETs) and nanoelectromechanical systems (NEMS). The numerical results allow for evaluations of the electrical properties such as charge …