Nanoscience and Nanotechnology Commons^™

Optical Communication Using Hybrid Micro Electro Mechanical Structures (Mems) And Commercial Corner Cube Retroreflector (Ccr), Sunny Kedia

USF Tampa Graduate Theses and Dissertations

This dissertation presents a free-space, long-range, passive optical communication system that uses electrostatically modulated microelectromechanical systems (MEMS) structures coupled with a glass total internal reflection (TIR)-type corner cube retroreflector (CCR) as a non-emitting data transmitter. A CCR consists of three mirrors orthogonal to each other, so that the incident beam is reflected back to the incident beam, source. The operational concept is to have a MEMS modulator fusion with TIR CCR, such that the modulators are working periodically to disrupt the evanescent waves at the air interface of one of the three back glass faces of a TIR CCR. The …

In Vacuo Fabrication And Electronic Structure Characterization Of Atomic Layer Deposition Thin Films, Michael Schaefer

USF Tampa Graduate Theses and Dissertations

Improvement of novel electronic devices is possible by tailor-designing the electronic structure at device interfaces. Common problems observed at interfaces are related to unwanted band alignment caused by the chemical diversity of interface partners, influencing device performance negatively. One way to address this problem is by introducing ultra-thin interfacial dipole layers, steering the band alignment in a desired direction. The requirements are strict in terms of thickness, conformity and low density of defects, making sophisticated deposition techniques necessary. Atomic layer deposition (ALD) with its Ångstrom-precise thickness control can fulfill those requirements.

The work presented here encompasses the implementation of an …

Nanomechanical And Nanotribological Characterization Of Sub-Micron Polymeric Spheres, Himanshu Kumar Verma

USF Tampa Graduate Theses and Dissertations

Friction between nanoscale objects has been a subject of great interest and intense research effort for the last two decades. However, the vast majority of the work done in this area has focused upon the sliding friction between two rigid, atomically smooth surfaces. Thus the parameter most explored has been the corrugation in the atomic potentials and how this affects the force required to slide one object across another. In truth, many nanoscale objects whose translation force is of practical interest are more spherical in nature. We hypothesize that the factors that determine the translation force will be related, not …

Engineering The Ground State Of Complex Oxides, Derek Joseph Meyers

Graduate Theses and Dissertations

Transition metal oxides featuring strong electron-electron interactions have been at the forefront of condensed matter physics research in the past few decades due to the myriad of novel and exciting phases derived from their competing interactions. Beyond their numerous intriguing properties displayed in the bulk they have also shown to be quite susceptible to externally applied perturbation in various forms. The dominant theme of this work is the exploration of three emerging methods for engineering the ground states of these materials to access both their applicability and their deficiencies.

The first of the three methods involves a relatively new set …

Studies Of Periodic And Quasiperiodic Gold Nanohole Arrays And Their Applications, Zhaoliang Yang

Electronic Thesis and Dissertation Repository

Wavelength to refractive index sensitivity and resonance wavelength position are two very important performance characteristics for nanohole array based surface plasmon resonance sensors while these characteristics are mostly researched on periodic nanohole arrays, instead of quasiperiodic nanohole arrays. This thesis deduces theoretical equations about the wavelength to refractive index sensitivity and resonance wavelength position of quasiperiodic nanohole arrays. Theoretical analysis shows that wavelength to refractive index sensitivity is not associated with geometry pattern, hole size or pitch but with the wavelength. A novel surface plasmon resonance platform is built by transferring gold films patterned with quasiperiodic nanohole arrays to the …

Epitaxial Growth Of Silicon On Poly-Crystalline Si Seed Layer At Low Temperature By Using Hot Wire Chemical Vapor Deposition, Manal Abdullah Aldawsari

Graduate Theses and Dissertations

There has been a growing interest in using low cost material as a substrate for the large grained polycrystalline silicon photovoltaic devices. The main property of those devices is the potential of obtaining high efficiency similar to crystalline Si devices efficiency yet at much lower cost because of the thin film techniques. Epitaxial growth of Si at low temperatures on low cost large grained seed layers, prepared by aluminum induced crystallization method (AIC), using hot wire chemical vapor deposition (HWCVD) system is investigated in this thesis. In this work, different parameters have been studied in order to optimize the growth …

Nanoparticle Plasmonics: Going Practical With Transition Metal Nitrides, U. Guler, V. M. Shalaev, A. Boltasseva

U. Guler

Promising designs and experimental realizations of devices with unusual properties in the field of plasmonics have attracted a great deal of attention over the past few decades. However, the high expectations for realized technology products have not been met so far. The main complication is the absence of robust, high performance, low cost plasmonic materials that can be easily integrated into already established technologies such as microelectronics. This review provides a brief discussion on alternative plasmonic materials for localized surface plasmon applications and focuses on transition metal nitrides, in particular, titanium nitride, which has recently been shown to be a …

Optical Down-Conversion In Doped Znse:Tb3+ Nanocrystals, Sandip Das, K. C. Mandal

Krishna C. Mandal

No abstract provided.

Optical Down-Conversion In Doped Znse:Tb3+ Nanocrystals, Sandip Das, K. C. Mandal

Krishna C. Mandal

No abstract provided.

Properties Of Exchange Coupled All-Garnet Magneto-Optic Thin Film Multilayer Structures, Mohammad Nur-E-Alam, Mikhail Vasiliev, Viacheslav A. Kotov, Dmitry Balabanov, Ilya Akimov, Kamal Alameh

Mikhail Vasiliev

The effects of exchange coupling on magnetic switching properties of all-garnet multilayer thin film structures are investigated. All-garnet structures are fabricated by sandwiching a magneto-soft material of composition type Bi1.8Lu1.2Fe3.6Al1.4O12 or Bi3Fe5O12:Dy2O3 in between two magneto-hard garnet material layers of composition type Bi2Dy1Fe4Ga1O12 or Bi2Dy1Fe4Ga1O12:Bi2O3. The fabricated RF magnetron sputtered exchange-coupled all-garnet multilayers demonstrate a very attractive combination of magnetic properties, and are of interest for emerging applications in optical sensors and isolators, ultrafast nanophotonics and magneto-plasmonics. An unconventional type of magnetic hysteresis behavior not observed previously in magnetic garnet thin films is reported and discussed.

Using Ab Initio Simulations To Examine The Flexoelectric Effect In Perovskites, Austin B. Plymill

EURēCA: Exhibition of Undergraduate Research and Creative Achievement

Flexoelectricity is a property that dielectric materials exhibit where they produce polarization when subject to an inhomogeneous deformation. In the past, this effect has been largely ignored, as its effect in bulk materials has been much less significant than the related effect of piezoelectricity, the polarization of material due to uniform deformation. Interest in flexoelectricity has been increasing in recent years due to the development of nanotechnologies. Flexoelectricity is proportional to the strain gradient a material is subjected to making the flexoelectric effect immense on the nanoscale. Additionally, the flexoelectric effect scales with the dielectric constant making it have a …

Growth Of Low Disorder Gaas/Algaas Heterostructures By Molecular Beam Epitaxy For The Study Of Correlated Electron Phases In Two Dimensions, John D. Watson

Open Access Dissertations

The unparalleled quality of GaAs/AlGaAs heterostructures grown by molecular beam epitaxy has enabled a wide range of experiments probing interaction effects in two-dimensional electron and hole gases. This dissertation presents work aimed at further understanding the key material-related issues currently limiting the quality of these 2D systems, particularly in relation to the fractional quantum Hall effect in the 2^nd Landau level and spin-based implementations of quantum computation.^ The manuscript begins with a theoretical introduction to the quantum Hall effect which outlines the experimental conditions necessary to study the physics of interest and motivates the use of the semiconductor growth …

Plasmonics On The Slope Of Enlightenment: The Role Of Transition Metal Nitrides, U. Guler, A. Kildishev, A. Boltasseva, V. Shalaev

U. Guler

The key problem currently faced by plasmonics is related to material limitations. After almost two decades of extreme excitement and research largely based on the use of noble metals, scientists have come to a consensus on the importance of exploring alternative plasmonic materials to address application-specific challenges to enable the development of new functional devices. Such a change in motivation will undoubtedly lead to significant advancements in plasmonics technology transfer and could have a revolutionary impact on nanophotonic technologies in general. Here, we report on one of the approaches that, together with other new material platforms, mark an insightful technology-driven …

Multiscale Examination And Modeling Of Electron Transport In Nanoscale Materials And Devices, Douglas R. Banyai

Dissertations, Master's Theses and Master's Reports - Open

For half a century the integrated circuits (ICs) that make up the heart of electronic devices have been steadily improving by shrinking at an exponential rate. However, as the current crop of ICs get smaller and the insulating layers involved become thinner, electrons leak through due to quantum mechanical tunneling. This is one of several issues which will bring an end to this incredible streak of exponential improvement of this type of transistor device, after which future improvements will have to come from employing fundamentally different transistor architecture rather than fine tuning and miniaturizing the metal-oxide-semiconductor field effect transistors (MOSFETs) …

Understanding Electronic Structure And Transport Properties In Nanoscale Junctions, Kamal B. Dhungana

Dissertations, Master's Theses and Master's Reports - Open

Understanding the electronic structure and the transport properties of nanoscale materials are pivotal for designing future nano-scale electronic devices. Nanoscale materials could be individual or groups of molecules, nanotubes, semiconducting quantum dots, and biomolecules. Among these several alternatives, organic molecules are very promising and the field of molecular electronics has progressed significantly over the past few decades. Despite these progresses, it has not yet been possible to achieve atomic level control at the metal-molecule interface during a conductance measurement, which hinders the progress in this field. The lack of atomic level information of the interface also makes it much harder …

Structures, Properties And Functionalities Of Magnetic Domain Walls In Thin Films, Nanowires And Atomic Chains: Micromagnetic And Ab Initio Studies, Liwei D. Geng

Dissertations, Master's Theses and Master's Reports - Open

Structures, properties and functionalities of magnetic domain walls in thin film, nanowires and atomic chains are studied by micromagnetic simulations and ab initio calculations in this dissertation. For magnetic domain walls in thin films, we computationally investigated the dynamics of one-dimensional domain wall line in ultrathin ferromagnetic film, and the exponent α = 1.24 ± 0.05 is obtained in the creep regime near depinning force, indicating the washboard potential model is supported by our simulations. Furthermore, the roughness, creep, depinning and flow of domain wall line with commonly existed substructures driven by magnetic field are also studied. Our simulation results …

The Interaction Mechanisms Of A Screw Dislocation With A Defective Coherent Twin Boundary In Copper, Qiongjiali Fang

Graduate College Dissertations and Theses

Σ3{111} coherent twin boundary (CTB) in face-centered-cubic (FCC) metals and alloys have been regarded as an efficient way to simultaneously increase strength and ductility at the nanoscale. Extensive study of dislocation-CTB interaction has been carried out by a combination of computer simulations, experiments and continuum theory. Most of them, however, are based on the perfect CTB assumption. A recent study [Wang YM, Sansoz F, LaGrange T, et al. Defective twin boundaries in nanotwinned metals. Nat Mater. 2013;12(8):697-702.] has revealed the existence of intrinsic kink-like defects in CTBs of nanotwinned copper through nanodiffraction mapping technique, and has confirmed the effect of …

Novel Techniques For Quasi Three-Dimensional Nanofabrication Of Transformation Optics Devices, Paul R. West

Open Access Dissertations

Current nanofabrication is almost exclusively limited to top-down, two-dimensional techniques. As technology moves more deeply into the nano-scale regime, fabrication of new devices with quasi three-dimensional geometries shows great potential. One excellent example of an emerging field that requires this type of non-conformal 3D fabrication technique is the field of Transformation Optics. This field involves transforming and manipulating the optical space through which light propagates. Arbitrarily manipulating the optical space requires advanced fabrication techniques, which are not possible with current two-dimensional fabrication technologies. One step toward quasi three-dimensional nanofabrication involves employing angled deposition allowing new growth mechanisms, and enabling a …

Enhanced Magnetoimpedance And Microwave Absorption Responses Of Soft Ferromagnetic Materials For Biodetection And Energy Sensing, Jagannath Devkota

USF Tampa Graduate Theses and Dissertations

A combination of magnetic sensors with magnetic nanoparticles offers a promising approach for highly sensitive, simple, and rapid detection of cancer cells and biomolecules. The challenge facing the field of magnetic biosensing is the development of low-cost devices capable of superconducting quantum interference device (SQUID)-like field sensitivity at room temperature. In another area of interest, improving the sensitivity of existing electromagnetic field sensors for microwave energy sensing applications is an important and challenging task. In this dissertation, we have explored the excellent magnetoimpedance and microwave absorption responses of soft ferromagnetic amorphous ribbons and microwires for the development of high-performance magnetic …

Reconfigurable Solid-State Dye-Doped Polymer Ring Resonator Lasers, Hengky Chandrahalim, Xudong Fan

Faculty Publications

This paper presents wavelength configurable on-chip solid-state ring lasers fabricated by a single-mask standard lithography. The single- and coupled-ring resonator hosts were fabricated on a fused-silica wafer and filled with 3,3′-Diethyloxacarbocyanine iodide (CY3), Rhodamine 6G (R6G) and 3,3′-Diethylthiadicarbocyanine iodide (CY5)-doped polymer as the reconfigurable gain media. The recorded lasing threshold was ~220 nJ/mm² per pulse for the single-ring resonator laser with R6G, marking the lowest threshold shown by solid-state dye-doped polymer lasers fabricated with a standard lithography process on a chip. A single-mode lasing from a coupled-ring resonator system with the lasing threshold of ~360 nJ/mm² per pulse …

Maximum Screening Fields Of Superconducting Multilayer Structures, Alex Gurevich

Physics Faculty Publications

It is shown that a multilayer comprised of alternating thin superconducting and insulating layers on a thick substrate can fully screen the applied magnetic field exceeding the superheating fields H_sof both the superconducting layers and the substrate, the maximum Meissner field is achieved at an optimum multilayer thickness. For instance, a dirty layer of thickness ~0.1μm at the Nb surface could increase H_s similar or equal to 240 mT of a clean Nb up to H_s similar or equal to 290 mT. Optimized multilayers of Nb₃Sn, NbN, some of the iron pnictides, or alloyed …

Molecular Dynamics Study On Defect Reduction Strategies Towards The Fabrication Of High Performance Cd1-Xznxte/Cds Solar Cells, Jose Juan Chavez

Open Access Theses & Dissertations

Cadmium Telluride is a material widely used in terrestrial thin film photovoltaic applications due to its nearly ideal band gap (~1.5 eV) and high absorption coefficient. Due to its low manufacturing cost, this technology has the potential to become a significant energy resource if higher energy conversion efficiencies are achieved. However, the module efficiencies (~14%) are still far from the theoretical maximum (~30%) for this material in a single junction configuration. The reason behind this low performance is attributed to the high number of defects that are present within the device materials. The physics behind the formation mechanisms of these …

Extraction Of Carrier Mobility And Interface Trap Density In Ingaas Metal Oxide Semiconductor Structures Using Gated Hall Method, Thenappan Chidambaram

Legacy Theses & Dissertations (2009 - 2024)

III-V semiconductors are potential candidates to replace Si as a channel material in next generation CMOS integrated circuits owing to their superior carrier mobilities. Low density of states (DOS) and typically high interface and border trap densities (Dit) in high mobility group III-V semiconductors provide difficulties in quantification of Dit near the conduction band edge. The trap response above the threshold voltage of a MOSFET can be very fast, and conventional Dit extraction methods, based on capacitance/conductance response (CV methods) of MOS capacitors at frequencies <1MHz, cannot distinguish conducting and trapped carriers. In addition, the CV methods have to deal with high dispersion in the accumulation region that makes it a difficult task to measure the true oxide capacitance, Cox value. Another implication of these properties of III-V interfaces is an ambiguity of determination of electron density in the MOSFET channel. Traditional evaluation of carrier density by integration of the C-V curve, gives incorrect values for Dit and mobility. Here we employ gated Hall method to quantify the Dit spectrum at the high-κ oxide/III-V semiconductor interface for buried and surface channel devices using Hall measurement and capacitance-voltage data. Determination of electron density directly from Hall measurements allows for obtaining true mobility values

Two-Dimensional Chalcogenides : Material Synthesis And Nano-Device Applications, Robin Bay Jacobs-Gedrim

Legacy Theses & Dissertations (2009 - 2024)

Low-dimensional nanostructures exhibit distinct properties from their bulk counterparts. Here the synthesis of novel low-dimensional nanostructures is demonstrated using both top down and bottom up processes and their properties are investigated. Two-dimensional (2D) binary sesquichalcogenides are introduced as a viable material platform for phase change random access memory, photodetection, and the investigation of topological insulator surface states. An exponential relationship is observed between layer thickness and energy consumption during switching of 2D phase change devices, ultra-high responsivity in 2D photoresistors, and surface-rich conduction in 2D topological insulator nanoplates. Additionally, methods for the assessment of chemical purity, stoichiometry, and dimensions of …

An Assessment Of Critical Dimension Small Angle X-Ray Scattering Metrology For Advanced Semiconductor Manufacturing, Charles Michael Settens

Legacy Theses & Dissertations (2009 - 2024)

Simultaneous migration of planar transistors to FinFET architectures, the introduction of a plurality of materials to ensure suitable electrical characteristics, and the establishment of reliable multiple patterning lithography schemes to pattern sub-10 nm feature sizes imposes formidable challenges to current in-line dimensional metrologies. Because the shape of a FinFET channel cross-section immediately influences the electrical characteristics, the evaluation of 3D device structures requires measurement of parameters beyond traditional critical dimension (CD), including their sidewall angles, top corner rounding and footing, roughness, recesses and undercuts at single nanometer dimensions; thus, metrologies require sub-nm and approaching atomic level measurement uncertainty.

Colloidal Plasmonic Titanium Nitride Nanoparticles: Properties And Applications, Urcan Guler, Sergey Suslov, Alexander V. Kildishev, Alexandra Boltasseva, Vladimir M. Shalaev

U. Guler