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Modeling The High-Speed Switching Of Far-Infrared Radiation By Photoionization In A Semiconductor, Thomas E. Wilson

Physics Faculty Research

Data from an earlier study [T. Vogel et al., Appl. Opt. 31, 329 (1992)] on the subnanosecond switching of 119-μm radiation in high-resistivity silicon by pulsed UV laser radiation, is compared with a refined one-dimensional numerical multilayer model accounting for the generation, recombination, and diffusion of the free carriers on the resulting far-infrared optical properties of the silicon. The inclusion of recent measurements for carrier-density and temperature-dependent transport parameters leads to improved agreement between experiment and theory.