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Full-Text Articles in Nanoscience and Nanotechnology
Studies Of Initial Growth Of Gan On Inn, Alaa Alnami
Studies Of Initial Growth Of Gan On Inn, Alaa Alnami
Graduate Theses and Dissertations
III-nitride materials have recently attracted much attention for applications in both the microelectronics and optoelectronics. For optoelectronic devices, III-nitride materials with tunable energy band gaps can be used as the active region of devices to enhance the absorption or emission. A such material is indium nitride (InN), which along with gallium nitride (GaN) and aluminum nitride (AlN) embody the very real promise of forming the basis of a broad spectrum, a high efficiency solar cell. One of the remaining complications in incorporating InN into a solar cell design is the effects of the high temperature growth of the GaN crystal …
Plasmonic Properties Of Nanoparticle And Two Dimensional Material Integrated Structure, Desalegn Tadesse Debu
Plasmonic Properties Of Nanoparticle And Two Dimensional Material Integrated Structure, Desalegn Tadesse Debu
Graduate Theses and Dissertations
Recently, various groups have demonstrated nano-scale engineering of nanostructures for optical to infrared wavelength plasmonic applications. Most fabrication technique processes, especially those using noble metals, requires an adhesion layer. Previously proposed theoretical work to support experimental measurement often neglect the effect of the adhesion layers. The first finding of this work focuses on the impact of the adhesion layer on nanoparticle plasmonic properties. Gold nanodisks with a titanium adhesion layer are investigated by calculating the scattering, absorption, and extinction cross-section with numerical simulations using a finite difference time domain (FDTD) method. I demonstrate that a gold nanodisk with an adhesive …