Nanoscience and Nanotechnology Commons^™

The Efficacy Of Programming Energy Controlled Switching In Resistive Random Access Memory (Rram), David Malien Nminibapiel

Electrical & Computer Engineering Theses & Dissertations

Current state-of-the-art memory technologies such as FLASH, Static Random Access Memory (SRAM) and Dynamic RAM (DRAM) are based on charge storage. The semiconductor industry has relied on cell miniaturization to increase the performance and density of memory technology, while simultaneously decreasing the cost per bit. However, this approach is not sustainable because the charge-storage mechanism is reaching a fundamental scaling limit. Although stack engineering and 3D integration solutions can delay this limit, alternate strategies based on non-charge storage mechanisms for memory have been introduced and are being actively pursued.

Resistive Random Access Memory (RRAM) has emerged as one of the …

Low-Temperature Fabrication Process For Integrated High-Aspect Ratio Metal Oxide Nanostructure Semiconductor Gas Sensors, William Paul Clavijo

Theses and Dissertations

This work presents a new low-temperature fabrication process of metal oxide nanostructures that allows high-aspect ratio zinc oxide (ZnO) and titanium dioxide (TiO₂) nanowires and nanotubes to be readily integrated with microelectronic devices for sensor applications. This process relies on a new method of forming a close-packed array of self-assembled high-aspect-ratio nanopores in an anodized aluminum oxide (AAO) template in a thin (2.5 µm) aluminum film deposited on a silicon and lithium niobate substrate (LiNbO₃). This technique is in sharp contrast to traditional free-standing thick film methods and the use of an integrated thin aluminum film …