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Full-Text Articles in Nanoscience and Nanotechnology

Vi Energy-Efficient Memristor-Based Neuromorphic Computing Circuits And Systems For Radiation Detection Applications, Jorge Iván Canales Verdial May 2023

Vi Energy-Efficient Memristor-Based Neuromorphic Computing Circuits And Systems For Radiation Detection Applications, Jorge Iván Canales Verdial

Electrical and Computer Engineering ETDs

Radionuclide spectroscopic sensor data is analyzed with minimal power consumption through the use of neuromorphic computing architectures. Memristor crossbars are harnessed as the computational substrate in this non-conventional computing platform and integrated with CMOS-based neurons to mimic the computational dynamics observed in the mammalian brain’s visual cortex. Functional prototypes using spiking sparse locally competitive approximations are presented. The architectures are evaluated for classification accuracy and energy efficiency. The proposed systems achieve a 90% true positive accuracy with a high-resolution detector and 86% with a low-resolution detector.


Material Characterization And Comparison Of Sol-Gel Deposited And Rf Magnetron Deposited Lead Zirconate Titanate Thin Films, Katherine Lynne Miles Nov 2022

Material Characterization And Comparison Of Sol-Gel Deposited And Rf Magnetron Deposited Lead Zirconate Titanate Thin Films, Katherine Lynne Miles

Mechanical Engineering ETDs

Lead zirconate titanate (PZT) has been a material of interest for sensor, actuator, and transducer applications in microelectromechanical systems (MEMS). This is due to their favorable piezoelectric, pyroelectric and ferroelectric properties. While various methods are available to deposit PZT thin films, radio frequency (RF) magnetron sputtering was selected to provide high quality PZT films with the added capability of batch processing. These sputter deposited PZT films were characterized to determine their internal film stress, Young’s modulus, composition, and structure. After characterization, the sputtered PZT samples were poled using corona poling and direct poling methods. As a means of comparison, commercially …


Characterization Of Electrophoretic Deposited Zinc Oxide Nanopartices For The Fabrication Of Next-Generation Nanoscale Electronic Applications, Fawwaz Abduh A. Hazzazi Jul 2022

Characterization Of Electrophoretic Deposited Zinc Oxide Nanopartices For The Fabrication Of Next-Generation Nanoscale Electronic Applications, Fawwaz Abduh A. Hazzazi

LSU Doctoral Dissertations

Several reports state that it is crucial to analyze nanoscale semiconductor materials and devices with potential benefits to meet the need for next-generation nanoelectronics, bio, and nanosensors. The progress in the electronics field is as significant now, with modern technology constantly evolving and a greater focus on more efficient robust optoelectronic applications. This dissertation focuses on the study and examination of the practicality of Electrophoretic Deposition (EPD) of zinc oxide (ZnO) nanoparticles (NPs) for use in semiconductor applications.

The feasibility of several synthesized electrolytes, with and without surfactants and APTES surface functionalization, is discussed. The primary objective of this study …


Photoassisted Nanoscale Memory Resistors, Amir Shariffar May 2022

Photoassisted Nanoscale Memory Resistors, Amir Shariffar

Graduate Theses and Dissertations

Memristors or memory resistors are promising two-terminal devices, which have the potential to revolutionize current electronic memory technologies. Memristors have been extensively investigated and reported to be practical devices, although they still suffer from poor stability, low retention time, and laborious fabrication processes.

The primary aim of this project was to achieve a device structure of quantum dots or thin films to address a fundamental challenge of unstable resistive switching behavior in memristors. Moreover, we aimed to investigate the effects of light illumination in terms of intensity and wavelength on the performance of the fabricated memristor. The parameters such as …


Colloidal Quantum Dot (Cqd) Based Mid-Wavelength Infrared Optoelectronics, Shihab Bin Hafiz Aug 2021

Colloidal Quantum Dot (Cqd) Based Mid-Wavelength Infrared Optoelectronics, Shihab Bin Hafiz

Dissertations

Colloidal quantum dot (CQD) photodetectors are a rapidly emerging technology with a potential to significantly impact today’s infrared sensing and imaging technologies. To date, CQD photodetector research is primarily focused on lead-chalcogenide semiconductor CQDs which have spectral response fundamentally limited by the bulk bandgap of the constituent material, confining their applications to near-infrared (NIR, 0.7-1.0 um) and short-wavelength infrared (SWIR, 1-2.5 um) spectral regions. The overall goal of this dissertation is to investigate a new generation of CQD materials and devices that advances the current CQD photodetector research toward the technologically important thermal infrared region of 3-5 ?m, known as …


Transport, Photoluminescence & Photoconduction Characteristics Of Free Standing Two-Dimensional Γ-Alumina & Titanium Superlattice Doped Two-Dimensional Γ-Alumina Grown By Graphene-Assisted Atomic Layer Deposition, Elaheh Kheirandish Aug 2021

Transport, Photoluminescence & Photoconduction Characteristics Of Free Standing Two-Dimensional Γ-Alumina & Titanium Superlattice Doped Two-Dimensional Γ-Alumina Grown By Graphene-Assisted Atomic Layer Deposition, Elaheh Kheirandish

Theses and Dissertations

This study presents a facile high-yield bottom-up fabrication, morphology, crystallographic and optoelectronic characterization of free-standing quasi-2D γ-alumina, a non van der Waals 2D material. The synthesis comprises a multi-cycle atomic layer deposition (ALD) of amorphous alumina on a porous interconnected graphene foam as a growth scaffold and removed next by annealing and sintering the alumina/graphene/alumina sandwich at ~ 800 °C in air . The crystallographic and structural characteristics of the formed non-van der Waals quasi 2D γ-alumina were studied by X-ray diffraction (XRD), selected area electron diffraction (SAED), and high-resolution transmission electron microscopy (HRTEM). This analysis revealed the synthesized 2D …


Thermoelectric Transport In Disordered Organic And Inorganic Semiconductors, Meenakshi Upadhyaya Jul 2021

Thermoelectric Transport In Disordered Organic And Inorganic Semiconductors, Meenakshi Upadhyaya

Doctoral Dissertations

The need for alternative energy sources has led to extensive research on optimizing the conversion efficiency of thermoelectric (TE) materials. TE efficiency is governed by figure-of-merit (ZT) and it has been an enormously challenging task to increase ZT > 1 despite decades of research due to the interdependence of material properties. Most doped inorganic semiconductors have a high electrical conductivity and moderate Seebeck coefficient, but ZT is still limited by their high lattice thermal conductivity. One approach to address this problem is to decrease thermal conductivity by means of alloying and nanostructuring, another is to consider materials with an inherently low …


Optical Engineering Of Iii-Nitride Nanowire Light-Emitting Diodes And Applications, Ha Quoc Thang Bui May 2021

Optical Engineering Of Iii-Nitride Nanowire Light-Emitting Diodes And Applications, Ha Quoc Thang Bui

Dissertations

Applications of III-nitride nanowires are intensively explored in different emerging technologies including light-emitting diodes (LEDs), laser diodes, photodiodes, biosensors, and solar cells. The synthesis of the III-nitride nanowires by molecular beam epitaxy (MBE) is investigated with significant achievements. III-nitride nanowires can be grown on dissimilar substrates i.e., silicon with nearly dislocation free due to the effective strain relaxation. III-nitride nanowires, therefore, are perfectly suited for high performance light emitters for cost-effective fabrication of the advanced photonic-electronic integrated platforms. This dissertation addresses the design, fabrication, and characterization of III-nitride nanowire full-color micro-LED (µLED) on silicon substrates for µLED display technologies, high-efficient …


Perovskite Thin Films Annealed In Supercritical Fluids For Efficient Solar Cells, Gilbert Annohene Jan 2021

Perovskite Thin Films Annealed In Supercritical Fluids For Efficient Solar Cells, Gilbert Annohene

Theses and Dissertations

In the field of photovoltaics, scientists and researchers are working fervently to produce a combination of efficient, stable, low cost and scalable devices. Methylammonium lead trihalide perovskite has attracted intense interest due to its high photovoltaic performance, low cost, and ease of manufacture. Their high absorption coefficient, tunable bandgap, low-temperature processing, and abundant elemental constituent provide innumerable advantages over other thin film absorber materials. Since the perovskite film is the most important in the device, morphology, crystallization, compositional and interface engineering have been explored to boost its performance and stability. High temperatures necessary for crystallization of organic-inorganic hybrid perovskite films …


Surface Engineering Solutions For Immersion Phase Change Cooling Of Electronics, Brendon M. Doran May 2019

Surface Engineering Solutions For Immersion Phase Change Cooling Of Electronics, Brendon M. Doran

Master's Theses

Micro- and nano-scale surface modifications have been a subject of great interest for enhancing the pool boiling heat transfer performance of immersion cooling systems due to their ability to augment surface area, improve wickability, and increase nucleation site density. However, many of the surface modification technologies that have been previously demonstrated show a lack of evidence concerning scalability for use at an industrial level. In this work, the pool boiling heat transfer performance of nanoporous anodic aluminum oxide (AAO) films, copper oxide (CuO) nanostructure coatings, and 1D roll-molded microfin arrays has been studied. Each of these technologies possess scalability in …


Straintronic Nanomagnetic Devices For Non-Boolean Computing, Md Ahsanul Abeed Jan 2019

Straintronic Nanomagnetic Devices For Non-Boolean Computing, Md Ahsanul Abeed

Theses and Dissertations

Nanomagnetic devices have been projected as an alternative to transistor-based switching devices due to their non-volatility and potentially superior energy-efficiency. The energy efficiency is enhanced by the use of straintronics which involves the application of a voltage to a piezoelectric layer to generate a strain which is ultimately transferred to an elastically coupled magnetostrictive nanomaget, causing magnetization rotation. The low energy dissipation and non-volatility characteristics make straintronic nanomagnets very attractive for both Boolean and non-Boolean computing applications. There was relatively little research on straintronic switching in devices built with real nanomagnets that invariably have defects and imperfections, or their adaptation …


Exploring Gated Nanoelectronic Devices Fabricated From 1d And 2d Materials, Prathamesh A. Dhakras Jan 2019

Exploring Gated Nanoelectronic Devices Fabricated From 1d And 2d Materials, Prathamesh A. Dhakras

Legacy Theses & Dissertations (2009 - 2024)

One and two dimensional materials are being extensively researched toward potential application as ultra-thin body channel materials. The difficulty of implementing physical doping methods in these materials has necessitated various alternative doping schemes, the most promising of which is the electrostatic gating technique due to its reconfigurability. This dissertation explores the different fundamental devices that can be fabricated and characterized by taking advantage of the electrostatic gating of individual single-walled carbon nanotubes (SWNTs), dense SWNT networks and exfoliated 2D tungsten diselenide (WSe2) flakes.


Cvd Molybdenum Disulfide : Material And Device Engineering, Eui Sang Song Jan 2019

Cvd Molybdenum Disulfide : Material And Device Engineering, Eui Sang Song

Legacy Theses & Dissertations (2009 - 2024)

Molybdenum disulfide (MoS2) is a semiconducting 2D layered material that has attracted a lot of attention due to its material properties for electronics and optoelectronics device applications. These include a layer-dependent band gap, an indirect to direct energy transition at monolayer state, and strong light-matter interaction. A large majority of 2D materials and devices have been studied through micromechanical exfoliation for extraction and electron beam lithography for device fabrication. These methodologies while able to generate high quality materials and precisely fabricated devices, are not suitable for large scale production. Efforts have been made to make MoS2 and other 2D materials …


Development And Demonstration Of A Processing And Assembly Pathway For A 3d-Synchronous Field Programmable Gate Array, Robert Carroll Jan 2019

Development And Demonstration Of A Processing And Assembly Pathway For A 3d-Synchronous Field Programmable Gate Array, Robert Carroll

Legacy Theses & Dissertations (2009 - 2024)

Field Programmable Gate Arrays (FPGA) are integrated circuits which can implement virtually any digital function and can be configured by a designer after manufacturing. This is beneficial when dedicated application specific runs are not time or cost effective; however, this flexibility comes at the cost of a substantially higher interconnect overhead. Three-dimensional (3D) integration can offer significant improvements in the FPGA architecture by stacking multiple device layers and interconnecting them in the third or vertical dimension, through the substrate, where path lengths are greatly reduced. This will allow for a higher density of devices and improvements in power consumption, signal …


Voltage-Controlled Deposition Of Nanoparticles For Next Generation Electronic Materials, Subhodip Maulik May 2018

Voltage-Controlled Deposition Of Nanoparticles For Next Generation Electronic Materials, Subhodip Maulik

LSU Doctoral Dissertations

This work presents both a feasibility study and an investigation into the voltage-controlled spray deposition of different nanoparticles, namely, carbon nanotubes (CNTs), as well as molybdenum disulfide (MoS2) and tungsten disulfide (WS2) from the transition metal dichalcogenides (TMDCs) family of materials. The study considers five different types of substrates as per their potential application to next-generation device electronics. The substrates selected for this research were: 1) aluminum as a conducting substrate, 2) silicon as a semiconducting substrate, 3) glass, silicon dioxide (SiO2), and syndiotactic poly methyl methacrylate (syndiotactic PMMA) as insulating substrates.

Since the …


Materials Engineering, Switching Mechanism And Novel Applications Of Memristive Devices, Hao Jiang Mar 2018

Materials Engineering, Switching Mechanism And Novel Applications Of Memristive Devices, Hao Jiang

Doctoral Dissertations

Memristive devices have attracted tremendous interests because of their highly desirable properties such as a simple structure, low switching voltage, fast switching speed, excellent scalability, multiple conductance states and great compatibility with the Complementary Metal–Oxide–Semiconductor technology. Hence, they stand out as promising candidates for next-generation non-volatile memory and electronic synapses in artificial neural network. This thesis reports systematic studies of the memristive switching phenomena in oxide based material systems, in aspects of materials engineering, switching mechanism and novel applications. We demonstrated efficient ways of engineering device performances such as metal doping and further presented a highly reliable hafnium oxide based …


Synthesis, Transport, And Thermoelectric Studies Of Topological Dirac Semimetal Cd3as2 For Room Temperature Waste Heat Recovery And Energy Conversion, Tahereh A. Hosseini Dec 2017

Synthesis, Transport, And Thermoelectric Studies Of Topological Dirac Semimetal Cd3as2 For Room Temperature Waste Heat Recovery And Energy Conversion, Tahereh A. Hosseini

Theses and Dissertations

ABSTRACT

SYNTHESIS, TRANSPORT, AND THERMOELECTRIC STUDIES OF TOPOLOGICAL DIRAC SEMIMETAL CD3AS2 FOR ROOM TEMPERATURE WASTE HEAT RECOVERY AND ENERGY CONVERSION

by

The University of Wisconsin-Milwaukee, 2017

Under the Supervision of Professor Nikolai Kouklin

Rising rates of the energy consumption and growing concerns over the climate change worldwide have made energy efficiency an urgent problem to address. Nowadays, almost two-thirds of the energy produced by burning fossil fuels to generate electrical power is lost in the form of the heat. On this front, increasing electrical power generation through a waste heat recovery remains one of the highly promising venues of the …


Investigating Scalable Manufacturing Of High-Conductivity Wires And Coatings From Ultra-Long Carbon Nanotubes, Pouria Khanbolouki Nov 2017

Investigating Scalable Manufacturing Of High-Conductivity Wires And Coatings From Ultra-Long Carbon Nanotubes, Pouria Khanbolouki

Mechanical Engineering ETDs

Carbon nanotubes (CNTs) are a promising candidate for next generation of electrical wirings and electromagnetic interference (EMI) shielding materials due to their exceptional mechanical and electrical properties. Wires and coatings from ultralong nanotubes that are highly crystalline, well-aligned and densely packed can achieve this goal. High-performance CNT conductors will be relatively lightweight and resistant to harsh conditions and therefore can potentially replace current conductors in many industries including aerospace, automotive, gas and oil.

This thesis investigates a new manufacturing approach, based on conventional solution coating and wire drawing methods, to fabricate high conductivity wires and coatings from ultra-long carbon nanotubes. …


Advances In Chemical Vapor Deposition Growth Of Molybdenum Disulfide For Photodetectors And Flexible Electronics, Carlos Francisco De Anda Orea Jan 2017

Advances In Chemical Vapor Deposition Growth Of Molybdenum Disulfide For Photodetectors And Flexible Electronics, Carlos Francisco De Anda Orea

Open Access Theses & Dissertations

The conversion of light into electrical signals is at the basis of technologies that affect our daily lives. Applications, including video imaging, optical communications, biomedical imaging, security, night-vision, gas sensing and motion detection have reached a high level of maturity due to the development of high-performance materials, large-scale production, and integration technologies. Currently conventional photodetectors made of Silicon (Si) or III-V compounds are about to reach their maximum efficiency, and every time it is harder to get a noticeable improvement in performance of sensors based on these materials, not to mention the complicated fabrication methods to achieve just a few …


Effect Of Ion Flux (Dose Rate) In Source-Drain Extension Ion Implantation For 10-Nm Node Finfet And Beyond On 300/450mm Platforms, Ming-Yi Shen Jan 2017

Effect Of Ion Flux (Dose Rate) In Source-Drain Extension Ion Implantation For 10-Nm Node Finfet And Beyond On 300/450mm Platforms, Ming-Yi Shen

Legacy Theses & Dissertations (2009 - 2024)

The improvement of wafer equipment productivity has been a continuous effort of the semiconductor industry. Higher productivity implies lower product price, which economically drives more demand from the market. This is desired by the semiconductor manufacturing industry. By raising the ion beam current of the ion implanter for 300/450mm platforms, it is possible to increase the throughput of the ion implanter. The resulting dose rate can be comparable to the performance of conventional ion implanters or higher, depending on beam current and beam size. Thus, effects caused by higher dose rate must be investigated further. One of the major applications …


Measurement And Analysis Of Iii-V & Ii-Vi Infrared Detectors: Radiometric, Noise Spectrum, And Radiation Tolerance Performance, Vincent M. Cowan Nov 2016

Measurement And Analysis Of Iii-V & Ii-Vi Infrared Detectors: Radiometric, Noise Spectrum, And Radiation Tolerance Performance, Vincent M. Cowan

Nanoscience and Microsystems ETDs

Infrared (IR) hybrid detector arrays and discrete detectors operated in the space environment may be subjected to a variety of sources of natural radiation while in orbit. This means IR detectors intended for applications such as space-based intelligence, surveillance, and reconnaissance (ISR) or space-situational awareness (SSA) must not only have high performance (high quantum efficiency, h and low dark-current density, JD, and preferably minimal 1/f noise content), but also their radiation tolerance or ability to withstand the effects of the radiation they would expect to encounter in space must be characterized and well understood. As the effects of …


Hybrid Straintronics-Spintronics: Energy-Efficient Non-Volatile Devices For Boolean And Non-Boolean Computation, Ayan K. Biswas Jan 2016

Hybrid Straintronics-Spintronics: Energy-Efficient Non-Volatile Devices For Boolean And Non-Boolean Computation, Ayan K. Biswas

Theses and Dissertations

Research in future generation computing is focused on reducing energy dissipation while maintaining the switching speed in a binary operation to continue the current trend of increasing transistor-density according to Moore’s law. Unlike charge-based CMOS technology, spin-based nanomagnetic technology, based on switching bistable magnetization of single domain shape-anisotropic nanomagnets, has the potential to achieve ultralow energy dissipation due to the fact that no charge motion is directly involved in switching. However, switching of magnetization has not been any less dissipative than switching transistors because most magnet switching schemes involve generating a current to produce a magnetic field, or spin transfer …


Synthesis, Device Fabrication, And Characterization Of Two-Dimensional Molybdenum Disulfide, Gustavo Alberto Lara Saenz Jan 2016

Synthesis, Device Fabrication, And Characterization Of Two-Dimensional Molybdenum Disulfide, Gustavo Alberto Lara Saenz

Open Access Theses & Dissertations

The miniaturization of electronic devices according to Moore's Law has been propelled by the continuous demand for faster and smaller devices which continue to advance technology. One recent contribution to this trend was the isolation and characterization of one atom thick of graphite, known as graphene, which led to the Nobel Prize in physics in 2010 being awarded to Andre Geim and Konstantin Novoselov. Graphene and its related nanocarbon derivatives have exceptional mechanical, thermal, optical and electronic properties, making them a potential candidate for electronics and optoelectronics applications. However, this material has no intrinsic bandgap and complicated processes are required …


Development Of A Physical And Electronic Model For Ruo2 Nanorod Rectenna Devices, Justin Dao Jan 2016

Development Of A Physical And Electronic Model For Ruo2 Nanorod Rectenna Devices, Justin Dao

Graduate College Dissertations and Theses

Ruthenium oxide (RuO2) nanorods are an emergent technology in nanostructure devices. As the physical size of electronics approaches a critical lower limit, alternative solutions to further device miniaturization are currently under investigation. Thin-film nanorod growth is an interesting technology, being investigated for use in wireless communications, sensor systems, and alternative energy applications.

In this investigation, self-assembled RuO2 nanorods are grown on a variety of substrates via a high density plasma, reactive sputtering process. Nanorods have been found to grow on substrates that form native oxide layers when exposed to air, namely silicon, aluminum, and titanium. Samples were analyzed with Scanning …


Epitaxial Growth Of Si-Ge-Sn Alloys For Optoelectronic Device Application, Aboozar Mosleh Dec 2015

Epitaxial Growth Of Si-Ge-Sn Alloys For Optoelectronic Device Application, Aboozar Mosleh

Graduate Theses and Dissertations

Microelectronics industry has experienced a tremendous change over the last few decades and has shown that Moore’s law has been followed by doubling the number of transistors on the chip every 18 months. However, continuous scaling down of the transistors size is reaching the physical limits and data transfer through metal interconnects will not be able to catch up with the increasing data processing speed in the future. Therefore, optical data transfer between chips and on-chip has been widely investigated. Silicon based optoelectronics has received phenomenal attention since Si has been the core material on which microelectronic industry has been …


Implementation Of Strategies To Improve The Reliability Of Iii-Nitride Photodetectors Towards The Realization Of Visible And Solar-Blind Imaging Arrays, John Bulmer Jan 2015

Implementation Of Strategies To Improve The Reliability Of Iii-Nitride Photodetectors Towards The Realization Of Visible And Solar-Blind Imaging Arrays, John Bulmer

Legacy Theses & Dissertations (2009 - 2024)

Ultraviolet (UV) radiation detectors are being heavily researched for applications in non-line-of-sight (NLOS) communication systems, flame monitoring, biological detection, and astronomical studies. These applications are currently being met by the use of Si-based photomultiplier tubes (PMTs), which are bulky, fragile, expensive and require the use of external filters to achieve true visible-blind and solar-blind operation.


Extraction Of Carrier Mobility And Interface Trap Density In Ingaas Metal Oxide Semiconductor Structures Using Gated Hall Method, Thenappan Chidambaram Jan 2015

Extraction Of Carrier Mobility And Interface Trap Density In Ingaas Metal Oxide Semiconductor Structures Using Gated Hall Method, Thenappan Chidambaram

Legacy Theses & Dissertations (2009 - 2024)

III-V semiconductors are potential candidates to replace Si as a channel material in next generation CMOS integrated circuits owing to their superior carrier mobilities. Low density of states (DOS) and typically high interface and border trap densities (Dit) in high mobility group III-V semiconductors provide difficulties in quantification of Dit near the conduction band edge. The trap response above the threshold voltage of a MOSFET can be very fast, and conventional Dit extraction methods, based on capacitance/conductance response (CV methods) of MOS capacitors at frequencies <1MHz, cannot distinguish conducting and trapped carriers. In addition, the CV methods have to deal with high dispersion in the accumulation region that makes it a difficult task to measure the true oxide capacitance, Cox value. Another implication of these properties of III-V interfaces is an ambiguity of determination of electron density in the MOSFET channel. Traditional evaluation of carrier density by integration of the C-V curve, gives incorrect values for Dit and mobility. Here we employ gated Hall method to quantify the Dit spectrum at the high-κ oxide/III-V semiconductor interface for buried and surface channel devices using Hall measurement and capacitance-voltage data. Determination of electron density directly from Hall measurements allows for obtaining true mobility values


Carbon 1d/2d Nanoelectronics : Integration And Device Applications, Zhaoying Hu Jan 2015

Carbon 1d/2d Nanoelectronics : Integration And Device Applications, Zhaoying Hu

Legacy Theses & Dissertations (2009 - 2024)

Graphene is a one-atom thick planar monolayer of sp2-bonded carbon atoms organized in a hexagonal crystal lattice. A single walled carbon nanotube (CNT) can be thought of as a graphene sheet rolled up into a seamless hollow cylinder with extremely high length-to-diameter ratio. Their ultra-thin body, large surface area, and exceptional electronic, optical and mechanical properties make these low-dimensional carbon materials ideal candidates for electronic applications. However, adopting low-dimensional carbon materials into semiconductor industry faces significant material and integration challenges. There is an urgent need for research at fundamental and applicative levels to find a roadmap for carbon nanomaterial to …


High Frequency Signal Transmission In Through Silicon Via Based 3d Integrated Circuit, Min Xu Jan 2015

High Frequency Signal Transmission In Through Silicon Via Based 3d Integrated Circuit, Min Xu

Legacy Theses & Dissertations (2009 - 2024)

Through silicon vias (TSVs) enable 3-dimensional (3D) integrated circuits (ICs), which have the potential to reduce the power consumption, interconnect length and overall communication latency in modern nanoelectronics systems. High-speed signal transmission channels through stacked silicon substrates are critical for 3D heterogeneous integration. This work presents systematic analyses of fabricated 3D IC test structures. This includes test structure design, fabrication, experimental characterization, equivalent circuit modeling and full wave simulations for high-speed signal transmission of the TSV based 3D IC channels.


Molecular Dynamics Study On Defect Reduction Strategies Towards The Fabrication Of High Performance Cd1-Xznxte/Cds Solar Cells, Jose Juan Chavez Jan 2015

Molecular Dynamics Study On Defect Reduction Strategies Towards The Fabrication Of High Performance Cd1-Xznxte/Cds Solar Cells, Jose Juan Chavez

Open Access Theses & Dissertations

Cadmium Telluride is a material widely used in terrestrial thin film photovoltaic applications due to its nearly ideal band gap (~1.5 eV) and high absorption coefficient. Due to its low manufacturing cost, this technology has the potential to become a significant energy resource if higher energy conversion efficiencies are achieved. However, the module efficiencies (~14%) are still far from the theoretical maximum (~30%) for this material in a single junction configuration. The reason behind this low performance is attributed to the high number of defects that are present within the device materials. The physics behind the formation mechanisms of these …