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ATOMIC-ABSORPTION-SPECTROMETRY; GAAS SURFACE RECOMBINATION; GALLIUM-ARSENIDE; MONOLAYERS; MOLECULES; SILICON; FUNCTIONALIZATION; ALKANETHIOLS; ALUMINUM; GAP(001)
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Assessment Of The Passivation Capabilities Of Two Different Covalent Chemical Modifications On Gap(100), David Richards, Dmitry Zemlyanov, Albena Ivanisevic
Assessment Of The Passivation Capabilities Of Two Different Covalent Chemical Modifications On Gap(100), David Richards, Dmitry Zemlyanov, Albena Ivanisevic
Dmitry Yurievich Zemlyanov
Gallium phosphide is a semiconductor material that can be used for the fabrication of optoelectronic devices. The report compares the ability of two similar organic molecules to form covalent bonds with the GaP(100) surface. Undecenoic acid (UDA) is a terminal alkene that can potentially form Ga-C bonds, and mercaptoundecanoic acid (MUA) is a thiol that can be used to generate Ga-S bonds. The chemical passivation capabilities of the functionalized surfaces exposed to different media were investigated by contact angle measurements, atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). Toxicity levels, which are important for sensing applications. were evaluated by …