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Full-Text Articles in Nanoscience and Nanotechnology
Purely Electronic Switching With High Uniformity, Resistance Tunability, And Good Retention In Pt-Dispersed Sio2 Thin Films For Reram, Albert Chen
Albert B Chen
Resistance switching memory operating by a purely electronic switching mechanism, which was first realized in Pt-dispersed SiO2 thin films, satisfies criteria including high uniformity, fast switching speed, and long retention for non-volatile memory application. This resistive element obeys Ohm's law for the area dependence, but its resistance exponentially increases with the film thickness, which provides new freedom to tailor the device characteristics.
Separation Modes In Microcontacts Identified By The Rate Dependence Of The Pull-Off Force, L. Chen, Nicol Mcgruer, George Adams, Yan Du
Separation Modes In Microcontacts Identified By The Rate Dependence Of The Pull-Off Force, L. Chen, Nicol Mcgruer, George Adams, Yan Du
Nicol E. McGruer
We report the observation of two distinct modes of rate-dependent behavior during contact cycling tests. One is a higher pull-off force at low cycling rates and the other is a higher pull-off force at high cycling rates. Subsequent investigation of these contacts using scanning electron microscopy (SEM) demonstrates that these two rate-dependent modes can be related to brittle and ductile separation modes. The former behavior is indicative of brittle separation, whereas the latter accompanies ductile separation. Thus by monitoring the rate dependence of the pull-off force, the type of separation mode can be identified during cycling without interrupting the test …
Parallel Arrays Of Individually Addressable Single-Walled Carbon Nanotube Field-Effect Transistors, Sarah Lastella, Govind Mallick, Raymond Woo, Shashi Karna, David Rider, Ian Manners, Yung-Joon Jung, Chang Ryu, Pulickel Ajayan
Parallel Arrays Of Individually Addressable Single-Walled Carbon Nanotube Field-Effect Transistors, Sarah Lastella, Govind Mallick, Raymond Woo, Shashi Karna, David Rider, Ian Manners, Yung-Joon Jung, Chang Ryu, Pulickel Ajayan
Yung Joon Jung
High-throughput field-effect transistors (FETs) containing over 300 disentangled, high-purity chemical-vapor-deposition-grown single-walled carbon nanotube (SWNT) channels have been fabricated in a three-step process that creates more than 160 individually addressable devices on a single silicon chip. This scheme gives a 96% device yield with output currents averaging 5.4 mA and reaching up to 17 mA at a 300 mV bias. Entirely semiconducting FETs are easily realized by a high current selective destruction of metallic tubes. The excellent dispersity and nearly-defect-free quality of the SWNT channels make these devices also useful for nanoscale chemical and biological sensor applications.