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Full-Text Articles in Nanoscience and Nanotechnology
Peridynamic Model For Dynamic Fracture In Unidirectional Fiber-Reinforced Composites, Wenke Hu, Youn Doh Ha, Florin Bobaru
Peridynamic Model For Dynamic Fracture In Unidirectional Fiber-Reinforced Composites, Wenke Hu, Youn Doh Ha, Florin Bobaru
Florin Bobaru Ph.D.
We propose a computational method for a homogenized peridynamics description of fiber-reinforced composites and we use it to simulate dynamic brittle fracture and damage in these materials. With this model we analyze the dynamic effects induced by different types of dynamic loading on the fracture and damage behavior of unidirectional fiber-reinforced composites. In contrast to the results expected from quasi-static loading, the simulations show that dynamic conditions can lead to co-existence of and transitions between fracture modes; matrix shattering can happen before a splitting crack propagates. We observe matrix–fiber splitting fracture, matrix cracking, and crack migration in the matrix, including …
Cause And Prevention Of Moisture-Induced Degradation Of Resistance Random Access Memory Nanodevices, Albert Chen
Cause And Prevention Of Moisture-Induced Degradation Of Resistance Random Access Memory Nanodevices, Albert Chen
Albert B Chen
Dielectric thin films in nanodevices may absorb moisture, leading to physical changes and property/performance degradation, such as altered data storage and readout in resistance random access memory. Here we demonstrate using a nanometallic memory that such degradation proceeds via nanoporosity, which facilitates water wetting in otherwise nonwetting dielectrics. Electric degradation only occurs when the device is in the charge-storage state, which provides a nanoscale dielectrophoretic force directing H2O to internal field centers (sites of trapped charge) to enable bond rupture and charged hydroxyl formation. While these processes are dramatically enhanced by an external DC or AC field and electron-donating electrodes, …
Demonstration And Modeling Of Multi-Bit Resistance Random Access Memory, Albert Chen
Demonstration And Modeling Of Multi-Bit Resistance Random Access Memory, Albert Chen
Albert B Chen
Although intermediates resistance states are common in resistance random access memory (RRAM), two-way switching among them has not been demonstrated. Using a nanometallic bipolar RRAM, we have illustrated a general scheme for writing/rewriting multi-bit memory using voltage pulses. Stability conditions for accessing intermediate states have also been determined in terms of a state distribution function and the weight of serial load resistance. A multi-bit memory is shown to realize considerable space saving at a modest decrease of switching speed.