Open Access. Powered by Scholars. Published by Universities.®
Nanoscience and Nanotechnology Commons™
Open Access. Powered by Scholars. Published by Universities.®
- Keyword
- Publication
- File Type
Articles 1 - 3 of 3
Full-Text Articles in Nanoscience and Nanotechnology
Biogenic Synthesis, Photocatalytic, And Photoelectrochemical Performance Of Ag–Zno Nanocomposite, S. A. Ansari, Mohammad Mansoob Khan Dr, M. O. Ansari, J. Lee, M. H. Cho
Biogenic Synthesis, Photocatalytic, And Photoelectrochemical Performance Of Ag–Zno Nanocomposite, S. A. Ansari, Mohammad Mansoob Khan Dr, M. O. Ansari, J. Lee, M. H. Cho
Dr. Mohammad Mansoob Khan
The development of coupled photoactive materials (metal/semiconductor) has resulted in significant advancements in heterogeneous visible light photocatalysis. This work reports the novel biogenic synthesis of visible light active Ag–ZnO nanocomposite for photocatalysis and photoelectrode using an electrochemically active biofilm (EAB). The results showed that the EAB functioned as a biogenic reducing tool for the reduction of Ag+, thereby eliminating the need for conventional reducing agents. The as-prepared Ag–ZnO nanocomposite was characterized by X-ray diffraction, transmission electron microscopy, diffuse reflectance spectroscopy, photoluminescence spectroscopy, and X-ray photoelectron spectroscopy. The photocatalytic experiments showed that the Ag–ZnO nanocomposite possessed excellent visible light photocatalytic activity …
Cause And Prevention Of Moisture-Induced Degradation Of Resistance Random Access Memory Nanodevices, Albert Chen
Cause And Prevention Of Moisture-Induced Degradation Of Resistance Random Access Memory Nanodevices, Albert Chen
Albert B Chen
Dielectric thin films in nanodevices may absorb moisture, leading to physical changes and property/performance degradation, such as altered data storage and readout in resistance random access memory. Here we demonstrate using a nanometallic memory that such degradation proceeds via nanoporosity, which facilitates water wetting in otherwise nonwetting dielectrics. Electric degradation only occurs when the device is in the charge-storage state, which provides a nanoscale dielectrophoretic force directing H2O to internal field centers (sites of trapped charge) to enable bond rupture and charged hydroxyl formation. While these processes are dramatically enhanced by an external DC or AC field and electron-donating electrodes, …
Demonstration And Modeling Of Multi-Bit Resistance Random Access Memory, Albert Chen
Demonstration And Modeling Of Multi-Bit Resistance Random Access Memory, Albert Chen
Albert B Chen
Although intermediates resistance states are common in resistance random access memory (RRAM), two-way switching among them has not been demonstrated. Using a nanometallic bipolar RRAM, we have illustrated a general scheme for writing/rewriting multi-bit memory using voltage pulses. Stability conditions for accessing intermediate states have also been determined in terms of a state distribution function and the weight of serial load resistance. A multi-bit memory is shown to realize considerable space saving at a modest decrease of switching speed.