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Full-Text Articles in Nanoscience and Nanotechnology
Fabrication Of Two-Dimensional Material-Based Nano-Capacitors Using Bismuth Selenite (Bi2seo5) To Study Its Dielectric Properties, Major Kc
McKelvey School of Engineering Theses & Dissertations
In recent years, the demand for high-performance micro and nanodevices has surged, necessitating the exploration of novel dielectric materials to replace conventional silicon dioxide. Following the continuation of the Moorse law, as device dimensions reduce to nanoscale levels, the properties of silicon dioxide can degrade, leading to issues such as increased leakage current and reduced gate control. Materials with superior electrical properties, such as higher dielectric constant, lower leakage current, and better thermal stability allowing for the development of faster, more efficient, and more reliable devices are in higher demand than ever. Two-dimensional layered semiconductor nanomaterials represented by compounds such …
Incorporation Of High-K Hfo2 Thin Films In A-Igzo Thin Film Transistor Devices, Aaron Hamilton Bales
Incorporation Of High-K Hfo2 Thin Films In A-Igzo Thin Film Transistor Devices, Aaron Hamilton Bales
Masters Theses
In this study, HfO2 [hafnium oxide] thin films are investigated extensively as part of indium gallium zinc oxide (IGZO) thin film transistor (TFT) devices. They are incorporated into the TFTs, both as a gate insulator and a passivation layer. First, the HfO2 [hafnium oxide] films themselves are investigated through an annealing study and through I-V and C-V measurements. Then, HfO2 [hafnium oxide] is suggested as a replacement for commonly used SiO2 [silicon dioxide] gate insulator, as it has a dielectric constant that is 4 – 6 times higher. This higher dielectric constant allows for comparable TFT performance at a lower …