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Full-Text Articles in Nanoscience and Nanotechnology
Anomalous Stranski-Krastanov Growth Of (111)-Oriented Quantum Dots With Tunable Wetting Layer Thickness, Christopher F. Schuck, Simon K. Roy, Trent Garrett, Paul J. Simmonds
Anomalous Stranski-Krastanov Growth Of (111)-Oriented Quantum Dots With Tunable Wetting Layer Thickness, Christopher F. Schuck, Simon K. Roy, Trent Garrett, Paul J. Simmonds
Materials Science and Engineering Faculty Publications and Presentations
Driven by tensile strain, GaAs quantum dots (QDs) self-assemble on In0.52Al0.48As(111)A surfaces lattice-matched to InP substrates. In this study, we show that the tensile-strained self-assembly process for these GaAs(111)A QDs unexpectedly deviates from the well-known Stranski-Krastanov (SK) growth mode. Traditionally, QDs formed via the SK growth mode form on top of a flat wetting layer (WL) whose thickness is fixed. The inability to tune WL thickness has inhibited researchers’ attempts to fully control QD-WL interactions in these hybrid 0D-2D quantum systems. In contrast, using microscopy, spectroscopy, and computational modeling, we demonstrate that for GaAs(111)A QDs, we …
Gamma-Ray Radiation Effects In Graphene-Based Transistors With H-Bn Nanometer Film Substrates, E. J. Cazalas, Michael R. Hogsed, S. R. Vangala, Michael R. Snure, John W. Mcclory
Gamma-Ray Radiation Effects In Graphene-Based Transistors With H-Bn Nanometer Film Substrates, E. J. Cazalas, Michael R. Hogsed, S. R. Vangala, Michael R. Snure, John W. Mcclory
Faculty Publications
Radiation effects on graphene field effect transistors (GFETs) with hexagonal boron nitride (h-BN) thin film substrates are investigated using 60Co gamma-ray radiation. This study examines the radiation response using many samples with varying h-BN film thicknesses (1.6 and 20 nm thickness) and graphene channel lengths (5 and 10 μm). These samples were exposed to a total ionizing dose of approximately 1 Mrad(Si). I-V measurements were taken at fixed time intervals between irradiations and postirradiation. Dirac point voltage and current are extracted from the I-V measurements, as well as mobility, Dirac voltage hysteresis, and the total number of GFETs that remain …
Electroosmotic Flow Of Viscoelastic Fluid In A Nanochannel Connecting Two Reservoirs, Lanju Mei, Shizhi Qian
Electroosmotic Flow Of Viscoelastic Fluid In A Nanochannel Connecting Two Reservoirs, Lanju Mei, Shizhi Qian
Mechanical & Aerospace Engineering Faculty Publications
Electroosmotic flow (EOF) of viscoelastic fluid with Linear Phan-Thien–Tanner (LPTT) constitutive model in a nanochannel connecting two reservoirs is numerically studied. For the first time, the influence of viscoelasticity on the EOF and the ionic conductance in the micro-nanofluidic interconnect system, with consideration of the electrical double layers (EDLs), is investigated. Regardless of the bulk salt concentration, significant enhancement of the flow rate is observed for viscoelastic fluid compared to the Newtonian fluid, due to the shear thinning effect. An increase in the ionic conductance of the nanochannel occurs for the viscoelastic fluid. The enhancement of the ionic conductance is …