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Carrier Transport Engineering In Wide Bandgap Semiconductors For Photonic And Memory Device Applications, Ravi Teja Velpula
Carrier Transport Engineering In Wide Bandgap Semiconductors For Photonic And Memory Device Applications, Ravi Teja Velpula
Dissertations
Wide bandgap (WBG) semiconductors play a crucial role in the current solid-state lighting technology. The AlGaN compound semiconductor is widely used for ultraviolet (UV) light-emitting diodes (LEDs), however, the efficiency of these LEDs is largely in a single-digit percentage range due to several factors. Until recently, AlInN alloy has been relatively unexplored, though it holds potential for light-emitters operating in the visible and UV regions. In this dissertation, the first axial AlInN core-shell nanowire UV LEDs operating in the UV-A and UV-B regions with an internal quantum efficiency (IQE) of 52% are demonstrated. Moreover, the light extraction efficiency of this …
Nanowire-Based Light-Emitting Diodes: A New Path Towards High-Speed Visible Light Communication, Mohsen Nami
Nanowire-Based Light-Emitting Diodes: A New Path Towards High-Speed Visible Light Communication, Mohsen Nami
Physics & Astronomy ETDs
Nano-scale optoelectronic devices have gained significant attention in recent years. Among these devices are semiconductor nanowires, whose dimeters range from 100 to 200 nm. Semiconductor nanowires can be utilized in many different applications including light-emitting diodes and laser diodes. Higher surface to volume ratio makes nanowire-based structures potential candidates for the next generation of photodetectors, sensors, and solar cells. Core-shell light-emitting diodes based on selective-area growth of gallium nitride (GaN) nanowires provide a wide range of advantages. Among these advantages are access to non-polar m-plane sidewalls, higher active region area compared to conventional planar structures, and reduction of threading …