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Full-Text Articles in Nanoscience and Nanotechnology
Reliability Characterization Of A Low-K Dielectric Using Its Magnetoresistance As A Diagnostic Tool, Philip Alister Williams
Reliability Characterization Of A Low-K Dielectric Using Its Magnetoresistance As A Diagnostic Tool, Philip Alister Williams
Legacy Theses & Dissertations (2009 - 2024)
The introduction of low dielectric constant materials within the integrated circuit (IC) chip technology industry was a concerted effort to decrease the resistance-capacitance (RC) time delay inherent within the dielectric materials used as insulators. This stems from a demand for greater device density per IC chip and decreased feature sizes but is fast becoming a reliability issue. Concomitant with the demand for decreased feature sizes, also in adherence with Moore’s Law (which states that the number of devices on a die doubles every two years), is a reduction in device speed and performance due to device intra-level interconnection signal delays. …
Exploring Magnetic Nanostructures Embedded Within Single-Crystal Silicon For Generation Of Spin-Polarized Carriers, Machara Krishna Girish Malladi
Exploring Magnetic Nanostructures Embedded Within Single-Crystal Silicon For Generation Of Spin-Polarized Carriers, Machara Krishna Girish Malladi
Legacy Theses & Dissertations (2009 - 2024)
Integrating magnetic functionalities with silicon holds the promise of developing, in the most dominant semiconductor, a paradigm-shift information technology based on the manipulation and control of electron spin and charge. Here, we demonstrate an ion implantation approach enabling the synthesis of a ferromagnetic layer within a defect free Si environment by exploiting an additional implant of hydrogen in a region deep below the metal implanted layer. Upon post-implantation annealing, nanocavities created within the H-implanted region act as trapping sites for gettering the implanted metal species, resulting in the formation of metal nanoparticles in a Si region of excellent crystal quality. …
Magnetoresistance Of A Low-K Dielectric, Brian Thomas Mcgowan
Magnetoresistance Of A Low-K Dielectric, Brian Thomas Mcgowan
Legacy Theses & Dissertations (2009 - 2024)
Low-k dielectrics have been incorporated into advanced computer chip technologies as a part of the continuous effort to improve computer chip performance. One drawback associated with the implementation of low-k dielectrics is the large leakage current which conducts through the material, relative to silica. Another drawback is that the breakdown voltage of low-k dielectrics is low, relative to silica [1]. This low breakdown voltage makes accurate reliability assessment of the failure mode time dependent dielectric breakdown (TDDB) in low-k dielectrics critical for the successful implementation of these materials. The accuracy with which one can assess this reliability is currently a …