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Full-Text Articles in Nanoscience and Nanotechnology
Structural Properties Of Ferroelectric Lead (Zirconium0.5,Titanium0.5)Oxygen3 Nanotube Array And Electronic Structure Of Lao Delta-Doped Strontium Titanate, Rajendra Prasad Adhikari
Structural Properties Of Ferroelectric Lead (Zirconium0.5,Titanium0.5)Oxygen3 Nanotube Array And Electronic Structure Of Lao Delta-Doped Strontium Titanate, Rajendra Prasad Adhikari
Graduate Theses and Dissertations
In this Dissertation we begin with two introductions on: 1) ferroelectricity and related phenomena, and 2) novel properties of Oxide electronics and the generation of two dimensional electron gas. We then give theoretical background of density functional theory (including LDA+U) and pseudopotentials. The first part of research work is about structural, polarization, and dielectric properties of ferroelectric Lead Zirconate Titanate (PZT) solid solution in the form of a nanotube array, embedded in a matrix medium of different ferroelectric strengths. We use the effective Hamiltonian derived from first-principles and finite-temperature Monte Carlo methods to determine the various properties. We revealed different …
Quantum Transport In In0.75Ga0.25As Quantum Wires, P. J. Simmonds, F. Sfigakis, H. E. Beere, D. A. Ritchie, M. Pepper, D. Anderson, G. A.C. Jones
Quantum Transport In In0.75Ga0.25As Quantum Wires, P. J. Simmonds, F. Sfigakis, H. E. Beere, D. A. Ritchie, M. Pepper, D. Anderson, G. A.C. Jones
Paul J. Simmonds
In addition to quantized conductance plateaus at integer multiples of 2e2/h, the differential conductance G=dI/dV shows plateaus at 0.25(2e2/h) and 0.75(2e2/h) under applied source-drain bias in In0.75Ga0.25As quantum wires defined by insulated split gates. This observation is consistent with a spin-gap model for the 0.7 structure. Using a tilted magnetic field to induce Landau level crossings, the g factor was measured to be ~9 by the coincidence method. This material, with a mobility of 1.8×105 cm …
Growth-Temperature Optimization For Low Carrier-Density In0.75Ga0.25As-Based High Electron Mobility Transistors On Inp, Paul J. Simmonds, H. E. Beere, D. A. Ritchie, S. N. Holmes
Growth-Temperature Optimization For Low Carrier-Density In0.75Ga0.25As-Based High Electron Mobility Transistors On Inp, Paul J. Simmonds, H. E. Beere, D. A. Ritchie, S. N. Holmes
Paul J. Simmonds
Two-dimensional electron gases (2DEGs) were formed in undoped In0.75Al0.25As / In0.75Ga0.25As / In0.75Al0.25As quantum wells. The optimal growth temperature for this structure is 410°C, with peak 2DEG electron mobility and density values of μ = 221000 cm2/V s and n = 1.36 × 1011 cm−2 at 1.5 K. This electron mobility is equal to the highest previously published for these undoped structures but with a factor of 2 reduction in n. This has been achieved through the use of a significantly thinner InAlAs …