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Quantum Transport In In0.75Ga0.25As Quantum Wires, P. J. Simmonds, F. Sfigakis, H. E. Beere, D. A. Ritchie, M. Pepper, D. Anderson, G. A.C. Jones
Quantum Transport In In0.75Ga0.25As Quantum Wires, P. J. Simmonds, F. Sfigakis, H. E. Beere, D. A. Ritchie, M. Pepper, D. Anderson, G. A.C. Jones
Paul J. Simmonds
In addition to quantized conductance plateaus at integer multiples of 2e2/h, the differential conductance G=dI/dV shows plateaus at 0.25(2e2/h) and 0.75(2e2/h) under applied source-drain bias in In0.75Ga0.25As quantum wires defined by insulated split gates. This observation is consistent with a spin-gap model for the 0.7 structure. Using a tilted magnetic field to induce Landau level crossings, the g factor was measured to be ~9 by the coincidence method. This material, with a mobility of 1.8×105 cm …