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Full-Text Articles in Nanoscience and Nanotechnology
Exploring Magnetic Nanostructures Embedded Within Single-Crystal Silicon For Generation Of Spin-Polarized Carriers, Machara Krishna Girish Malladi
Exploring Magnetic Nanostructures Embedded Within Single-Crystal Silicon For Generation Of Spin-Polarized Carriers, Machara Krishna Girish Malladi
Legacy Theses & Dissertations (2009 - 2024)
Integrating magnetic functionalities with silicon holds the promise of developing, in the most dominant semiconductor, a paradigm-shift information technology based on the manipulation and control of electron spin and charge. Here, we demonstrate an ion implantation approach enabling the synthesis of a ferromagnetic layer within a defect free Si environment by exploiting an additional implant of hydrogen in a region deep below the metal implanted layer. Upon post-implantation annealing, nanocavities created within the H-implanted region act as trapping sites for gettering the implanted metal species, resulting in the formation of metal nanoparticles in a Si region of excellent crystal quality. …
Experimental And Theoretical Analysis Of Strain Engineered Aluminium Nitride On Silicon For High Quality Aluminium(X)Indium(Y)Gallium(1-X-Y)Nitride Epitaxy, Mihir Hemant Tungare
Experimental And Theoretical Analysis Of Strain Engineered Aluminium Nitride On Silicon For High Quality Aluminium(X)Indium(Y)Gallium(1-X-Y)Nitride Epitaxy, Mihir Hemant Tungare
Legacy Theses & Dissertations (2009 - 2024)
III-Nitrides on Si are of great technological importance due to the availability of large area, epi ready Si substrates and the ability to heterointegrate with mature silicon micro and nanoelectronics. The major roadblock with realizing this is the large difference in thermal expansion coefficients and lattice constants between the two material systems. A novel technique developed in our research lab shows the potential of simultaneous and substantial reduction in dislocation and crack density in GaN on Si (111). Research undertaken in the current doctoral dissertation, validates the superior GaN quality on Si obtained using our technique and determines the factors …