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Full-Text Articles in Nanoscience and Nanotechnology
Mechanisms Of Euv Exposure : Photons, Electrons And Holes, Amrit Kausik Narasimhan
Mechanisms Of Euv Exposure : Photons, Electrons And Holes, Amrit Kausik Narasimhan
Legacy Theses & Dissertations (2009 - 2024)
The microelectronics industry’s movement toward smaller and smaller feature sizes has necessitated a shift to Extreme Ultra-Violet (EUV) lithography to be able to pattern sub 20-nm features, much like earlier shifts from i-line to 248 nm. However, this shift from 193-nm lithography to EUV (13.5 nm) poses significant obstacles. EUV is the first optical lithography to operate in an energy range (92 eV per photon vs. 6.4 eV per photon for 193 nm lithography) above the electron binding energies of common resist atomic species. This significant energy increase complicates resist design. For exposures of equal dose, resists receive 14 times …
Experimental And Simulation Studies Of Printability Of Buried Euv Mask Defects And Study Of Euv Reflectivity Loss Mechanisms Due To Standard Euv Mask Cleaning Processes, Mihirkant Upadhyaya
Experimental And Simulation Studies Of Printability Of Buried Euv Mask Defects And Study Of Euv Reflectivity Loss Mechanisms Due To Standard Euv Mask Cleaning Processes, Mihirkant Upadhyaya
Legacy Theses & Dissertations (2009 - 2024)
There's a big push for development and commercialization of extreme ultraviolet (EUV) lithography for high-volume semiconductor manufacturing of 14 nm half-pitch patterning and beyond. One of the primary concerns for making this a reality has been the ability to achieve defect-free masks. My study is focused on two aspects related to the performance degradation of the EUV masks namely EUV mask cleaning induced reflectivity loss mechanisms, and the buried multilayer phase defects in EUV masks.