Open Access. Powered by Scholars. Published by Universities.®
Nanoscience and Nanotechnology Commons™
Open Access. Powered by Scholars. Published by Universities.®
- Keyword
-
- Chain-Scission (1)
- EUV (1)
- Erbium (1)
- Extreme ultraviolet lithography (1)
- Hafnium compounds (1)
-
- Ligands (1)
- Light (1)
- Lithography (1)
- Luminescence (1)
- MORE (1)
- Microelectronics (1)
- Nanostructures (1)
- Organometallic compounds (1)
- Photonics (1)
- Photoresist (1)
- Photoresists (1)
- Resist (1)
- Scission (Chemistry) (1)
- Semiconductors (1)
- Si photonics (1)
- SiCO (1)
- Silicon (1)
- Silicon oxycarbide (1)
- White luminescence (1)
Articles 1 - 3 of 3
Full-Text Articles in Nanoscience and Nanotechnology
Novel Resist Systems For Euv Lithography : Ler, Chain-Scission, Nanoparticle And More, Brian Cardineau
Novel Resist Systems For Euv Lithography : Ler, Chain-Scission, Nanoparticle And More, Brian Cardineau
Legacy Theses & Dissertations (2009 - 2024)
Extreme Ultraviolet (EUV) lithography is currently the best option for replacing 193-nm lithography in future IC fabrication. For EUV to be successful, however, there are a number of challenges that must be overcome. Current resist designs struggle to meet the demands of future lithography nodes. We propose the best way to overcome these obstacles is through the design of novel resist systems.
White-Light And Infrared Emission From Sicxoy-Based Materials, Vasileios Nikas
White-Light And Infrared Emission From Sicxoy-Based Materials, Vasileios Nikas
Legacy Theses & Dissertations (2009 - 2024)
The development of a Si-based light source has attracted a high level of attention due to its potential unique advantages. For one, the monolithic integration of photonics on on-chip level along with the microelectronics devices would enhance the data processing rate. Additionally the cost per transmitted/processed information capacity can be significantly reduced.
Mueller Based Scatterometry And Optical Characterization Of Semiconductor Materials, Gangadhara Raja Muthinti
Mueller Based Scatterometry And Optical Characterization Of Semiconductor Materials, Gangadhara Raja Muthinti
Legacy Theses & Dissertations (2009 - 2024)
Scatterometry is one of the most useful metrology methods for the characterization and control of critical dimensions (CD) and the detailed topography of periodic structures found in microelectronics fabrication processes. Spectroscopic ellipsometry (SE) and normal incidence reflectometry (NI) based scatterometry are the most widely used optical methodologies for metrology of these structures. Evolution of better optical hardware and faster computing capabilities led to the development of Mueller Matrix (MM) based Scatterometry (MMS). Dimensional metrology using full Mueller Matrix (16 element) scatterometry in the wavelength range of 245nm-1000nm was discussed in this work. Unlike SE and NI, MM data provides complete …