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Full-Text Articles in Nanoscience and Nanotechnology
Mechanical Properties Of Stainless Steels With Heterogeneous Nanostructures, Hiromi Miura, Masakazu Kobayashi, Natuko Sugiura, Naoki Yoshinaga
Mechanical Properties Of Stainless Steels With Heterogeneous Nanostructures, Hiromi Miura, Masakazu Kobayashi, Natuko Sugiura, Naoki Yoshinaga
The 8th International Conference on Physical and Numerical Simulation of Materials Processing
No abstract provided.
Wetting And Interfacial Microstructure Of Porous Si3n4/Si3n4 Joint After Silver Metallization, Yanli Zhuang, Tiesong Lin, Shengjin Wang, Peng He, Dusan P. Sekulic, Dechang Jia, Hongmei Wei
Wetting And Interfacial Microstructure Of Porous Si3n4/Si3n4 Joint After Silver Metallization, Yanli Zhuang, Tiesong Lin, Shengjin Wang, Peng He, Dusan P. Sekulic, Dechang Jia, Hongmei Wei
The 8th International Conference on Physical and Numerical Simulation of Materials Processing
No abstract provided.
Review On Joining Of Advanced Materials And Dissimilar Materials In Harbin Institute Of Technology, Jun Qu, Yongping Lei, Peng He, Yunlong Chang
Review On Joining Of Advanced Materials And Dissimilar Materials In Harbin Institute Of Technology, Jun Qu, Yongping Lei, Peng He, Yunlong Chang
The 8th International Conference on Physical and Numerical Simulation of Materials Processing
No abstract provided.
Photoluminescence Measurement On Low-Temperature Metal Modulation Epitaxy Grown Gan, Yang Wu
Photoluminescence Measurement On Low-Temperature Metal Modulation Epitaxy Grown Gan, Yang Wu
Graduate Theses and Dissertations
A low-temperature photoluminescence (PL) study was conducted on low-temperature metal modulation epitaxy (MME) grown GaN. By comparing the PL signal from high temperature grown GaN buffer layers, and MME grown cap layers on top of the buffer layers, it was found that MME grown GaN cap has a significantly greater defect-related emission. The band edge PL from MME grown GaN found to be 3.51eV at low temperature. The binding energy of the exciton in GaN is determined to be 21meV through temperature dependence analysis. A PL peak at 3.29eV was found in the luminescence of the MME grown cap layer, …