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Full-Text Articles in Nanoscience and Nanotechnology
Cvd Molybdenum Disulfide : Material And Device Engineering, Eui Sang Song
Cvd Molybdenum Disulfide : Material And Device Engineering, Eui Sang Song
Legacy Theses & Dissertations (2009 - 2024)
Molybdenum disulfide (MoS2) is a semiconducting 2D layered material that has attracted a lot of attention due to its material properties for electronics and optoelectronics device applications. These include a layer-dependent band gap, an indirect to direct energy transition at monolayer state, and strong light-matter interaction. A large majority of 2D materials and devices have been studied through micromechanical exfoliation for extraction and electron beam lithography for device fabrication. These methodologies while able to generate high quality materials and precisely fabricated devices, are not suitable for large scale production. Efforts have been made to make MoS2 and other 2D materials …
Degradation And Exciton Energy Transfer Studies In Single-Walled Carbon Nanotube Bundles, Abhishek Gottipati
Degradation And Exciton Energy Transfer Studies In Single-Walled Carbon Nanotube Bundles, Abhishek Gottipati
Legacy Theses & Dissertations (2009 - 2024)
Single walled carbon nanotubes (SWNTs) due to their unique optical behavior, large surface area, robust mechanical strength and electrical properties make them one of the ideal candidates for sensing and opto-electronic applications. In this work, we explore the energy transfer (exciton energy transfer-EET) phenomena occurring between nanotubes in bundles, using resonance Raman spectroscopy.
Effects Of Low Energy E-Beam Irradiation On Graphene And Graphene Field Effect Transistors And Raman Metrology Of Graphene On Split Gate Test Structures, Gayathri Rao
Legacy Theses & Dissertations (2009 - 2024)
Apart from its compelling performance in conventional nanoelectronic device geometries, graphene is an appropriate candidate to study certain interesting phenomenon (e.g. the Veselago lens effect) predicted on the basis of its linear electron dispersion relation. A key requirement for the observation of such phenomenon in graphene and for its use in conventional field-effect transistor (FET) devices is the need to minimize defects such as consisting of - or resulting from - adsorbates and lattice non-uniformities, and reduce deleterious substrate effects. Consequently the investigation of the origin and interaction of defects in the graphene lattice is essential to improve and tailor …