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Materials Science and Engineering

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University at Albany, State University of New York

Theses/Dissertations

2013

Hafnium oxide

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Impacts Of Ion Irradiation On Hfo2-Based Resistive Random Access Memory Devices, Xiaoli He Jan 2013

Impacts Of Ion Irradiation On Hfo2-Based Resistive Random Access Memory Devices, Xiaoli He

Legacy Theses & Dissertations (2009 - 2024)

The impacts of ion irradiation on so-called vacancy-change mechanism (VCM) and electrochemical-metallization mechanism (ECM) ReRAM devices based on HfO2 are investigated using various ion sources: H+ (1 MeV), He+ (1 MeV), N+ (1MeV), Ne+ (1.6 MeV) and Ar+ (2.75 MeV) over a range of total doses (105 - 1011 rad(Si)) and fluences (1012 - 1015 cm-2). VCM-ReRAM devices show robust resistive switching function after all irradiation experiments. VCM resistive switching parameters including set voltage (Vset), reset voltage (Vreset), on-state resistance (Ron) and off-state resistance (Roff) exhibited, in most cases, modest changes …

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