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Articles 1 - 4 of 4
Full-Text Articles in Nanoscience and Nanotechnology
Studies Of Initial Growth Of Gan On Inn, Alaa Alnami
Studies Of Initial Growth Of Gan On Inn, Alaa Alnami
Graduate Theses and Dissertations
III-nitride materials have recently attracted much attention for applications in both the microelectronics and optoelectronics. For optoelectronic devices, III-nitride materials with tunable energy band gaps can be used as the active region of devices to enhance the absorption or emission. A such material is indium nitride (InN), which along with gallium nitride (GaN) and aluminum nitride (AlN) embody the very real promise of forming the basis of a broad spectrum, a high efficiency solar cell. One of the remaining complications in incorporating InN into a solar cell design is the effects of the high temperature growth of the GaN crystal …
Multifunctional Properties Of Gan Nws Applied To Nanometrology, Nanophotonics, And Scanning Probe Microscopy/Lithography, Mahmoud Behzadirad
Multifunctional Properties Of Gan Nws Applied To Nanometrology, Nanophotonics, And Scanning Probe Microscopy/Lithography, Mahmoud Behzadirad
Optical Science and Engineering ETDs
GaN nanowires are promising for optical and optoelectronic applications because of their waveguiding properties and large optical bandgap. Recent researches have shown superior mechanical properties of GaN nanowires which promises their use in new research areas e.g. nanometrology. In this work, we develop a scalable two-step top-down approach using interferometric lithography as well a bottom-up growth of NWs using MOCVD, to manufacture highly-ordered arrays of nanowires with atomic surface roughness and desired aspect-ratios to be used in nanophotonics and atomic precision metrology and lithography. Using this method, uniform nanowire arrays were achieved over large-areas (~1 mm2) with aspect-ratio …
Modeling Multiphase Flow And Substrate Deformation In Nanoimprint Manufacturing Systems, Andrew Cochrane
Modeling Multiphase Flow And Substrate Deformation In Nanoimprint Manufacturing Systems, Andrew Cochrane
Nanoscience and Microsystems ETDs
Nanopatterns found in nature demonstrate that macroscopic properties of a surface are tied to its nano-scale structure. Tailoring the nanostructure allows those macroscopic surface properties to be engineered. However, a capability-gap in manufacturing technology inhibits mass-production of nanotechnologies based on simple, nanometer-scale surface patterns. This gap represents an opportunity for research and development of nanoimprint lithography (NIL) processes. NIL is a process for replicating patterns by imprinting a fluid layer with a solid, nano-patterned template, after which ultraviolet cure solidifies the fluid resulting in a nano-patterned surface. Although NIL has been demonstrated to replicate pattern features as small as 4 …
Straintronic Nanomagnetic Devices For Non-Boolean Computing, Md Ahsanul Abeed
Straintronic Nanomagnetic Devices For Non-Boolean Computing, Md Ahsanul Abeed
Theses and Dissertations
Nanomagnetic devices have been projected as an alternative to transistor-based switching devices due to their non-volatility and potentially superior energy-efficiency. The energy efficiency is enhanced by the use of straintronics which involves the application of a voltage to a piezoelectric layer to generate a strain which is ultimately transferred to an elastically coupled magnetostrictive nanomaget, causing magnetization rotation. The low energy dissipation and non-volatility characteristics make straintronic nanomagnets very attractive for both Boolean and non-Boolean computing applications. There was relatively little research on straintronic switching in devices built with real nanomagnets that invariably have defects and imperfections, or their adaptation …