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Articles 1 - 4 of 4
Full-Text Articles in Nanoscience and Nanotechnology
Gate-Controlled Quantum Dots In Two-Dimensional Tungsten Diselenide And One-Dimensional Tellurium Nanowires, Shiva Davari Dolatabadi
Gate-Controlled Quantum Dots In Two-Dimensional Tungsten Diselenide And One-Dimensional Tellurium Nanowires, Shiva Davari Dolatabadi
Graduate Theses and Dissertations
This work focuses on the investigation of gate-defined quantum dots in two-dimensional transition metal dichalcogenide tungsten diselenide (WSe2) as a means to unravel mesoscopic physical phenomena such as valley-contrasting physics in WSe2 flakes and its potential application as qubit, as well as realizing gate-controlled quantum dots based on elementaltellurium nanostructures which may unlock the topological nature of the host material carriers such as Weyl states in tellurium nanowires.The fabrication and characterization of gate-defined hole quantum dots in monolayer and bilayer WSe2 are reported. The gate electrodes in the device design are located above and below the WSe2 nanoflakes to accumulate …
Experimental And Numerical Investigation Of Nanoparticle Removal Using Acoustic Streaming And The Effect Of Time, Kaveh Bakhtari, Rasim O. Guldiken, Prashanth Makaram, Ahmed A. Busnaina, Jin-Goo Park
Experimental And Numerical Investigation Of Nanoparticle Removal Using Acoustic Streaming And The Effect Of Time, Kaveh Bakhtari, Rasim O. Guldiken, Prashanth Makaram, Ahmed A. Busnaina, Jin-Goo Park
Jin-Goo Park
Theremoval of nanoparticles is becoming increasingly challenging as the minimumlinewidth continues to decrease in semiconductor manufacturing. In this paper,the removal of nanoparticles from flat substrates using acoustic streamingis investigated. Bare silicon wafers and masks with a 4 nmsilicon cap layer are cleaned. The silicon-cap films are usedin extreme ultraviolet masks to protect Mo–Si reflective multilayers. Theremoval of 63 nm polystyrene latex (PSL) particles from these substratesis conducted using single-wafer megasonic cleaning. The results show higherthan 99% removal of PSL nanoparticles. The results also showthat dilute SC1 provides faster removal of particles, which isalso verified by the analytical analysis. Particle removal …
Experimental And Analytical Study Of Submicrometer Particle Removal From Deep Trenches, Kaveh Bakhtari, Rasim O. Guldiken, Ahmed A. Busnaina, Jin-Goo Park
Experimental And Analytical Study Of Submicrometer Particle Removal From Deep Trenches, Kaveh Bakhtari, Rasim O. Guldiken, Ahmed A. Busnaina, Jin-Goo Park
Jin-Goo Park
Particle removal from patterned wafers and trenches presents a tremendous challenge in semiconductor manufacturing. In this paper, the removal of 0.3 and 0.8 µm polystyrene latex (PSL) particles from high-aspect-ratio 500 µm deep trenches is investigated. An experimental, analytical, and computational study of the removal of submicrometer particles at different depths inside the trench is presented. Red fluorescent polystyrene latex (PSL) particles were used to verify particle removal. The particles are counted using scanning fluorescent microscopy. A single-wafer megasonic tank is used for the particle removal. The results show that once a particle is removed from the walls or the …
An Ultrahigh Vacuum Complementary Metal Oxide Silicon Compatible Nonlithographic System To Fabricate Nanoparticle-Based Devices, Arghya Banerjee, Biswajit Das
An Ultrahigh Vacuum Complementary Metal Oxide Silicon Compatible Nonlithographic System To Fabricate Nanoparticle-Based Devices, Arghya Banerjee, Biswajit Das
Electrical & Computer Engineering Faculty Research
Nanoparticles of metals and semiconductors are promising for the implementation of a variety of photonic and electronic devices with superior performances and new functionalities. However, their successful implementation has been limited due to the lack of appropriate fabrication processes that are suitable for volume manufacturing. The current techniques for the fabrication of nanoparticles either are solution based, thus requiring complex surface passivation, or have severe constraints over the choice of particle size and material. We have developed an ultrahigh vacuum system for the implementation of a complex nanosystem that is flexible and compatible with the silicon integrated circuit process, thus …