Nanoscience and Nanotechnology Commons^™

Development Of Iii-V P-Mosfets With High-Kappa Gate Stack For Future Cmos Applications, Padmaja Nagaiah

Legacy Theses & Dissertations (2009 - 2024)

As the semiconductor industry approaches the limits of traditional silicon CMOS scaling, non-silicon materials and new device architectures are gradually being introduced to improve Si integrated circuit performance and continue transistor scaling. Recently, the replacement of SiO2 with a high-k material (HfO2) as gate dielectric has essentially removed one of the biggest advantages of Si as channel material. As a result, alternate high mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. III-V materials in particular have become of great interest as channel materials, owing to their superior electron transport …