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Full-Text Articles in Nanoscience and Nanotechnology
Development Of Iii-V P-Mosfets With High-Kappa Gate Stack For Future Cmos Applications, Padmaja Nagaiah
Development Of Iii-V P-Mosfets With High-Kappa Gate Stack For Future Cmos Applications, Padmaja Nagaiah
Legacy Theses & Dissertations (2009 - 2024)
As the semiconductor industry approaches the limits of traditional silicon CMOS scaling, non-silicon materials and new device architectures are gradually being introduced to improve Si integrated circuit performance and continue transistor scaling. Recently, the replacement of SiO2 with a high-k material (HfO2) as gate dielectric has essentially removed one of the biggest advantages of Si as channel material. As a result, alternate high mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. III-V materials in particular have become of great interest as channel materials, owing to their superior electron transport …
Graphene-Based Post-Cmos Architecture, Sansiri Tanachutiwat
Graphene-Based Post-Cmos Architecture, Sansiri Tanachutiwat
Legacy Theses & Dissertations (2009 - 2024)
The semiconductor industry relies on CMOS technology which is nearing its scaling limitations. In order to continue the historical growth rate of the device density of digital logic chips, novel nanomaterials and nanodevices will need to be developed.