Nanoscience and Nanotechnology Commons^™

Photoassisted Nanoscale Memory Resistors, Amir Shariffar

Graduate Theses and Dissertations

Memristors or memory resistors are promising two-terminal devices, which have the potential to revolutionize current electronic memory technologies. Memristors have been extensively investigated and reported to be practical devices, although they still suffer from poor stability, low retention time, and laborious fabrication processes.

The primary aim of this project was to achieve a device structure of quantum dots or thin films to address a fundamental challenge of unstable resistive switching behavior in memristors. Moreover, we aimed to investigate the effects of light illumination in terms of intensity and wavelength on the performance of the fabricated memristor. The parameters such as …

Perovskite Thin Films Annealed In Supercritical Fluids For Efficient Solar Cells, Gilbert Annohene

Theses and Dissertations

In the field of photovoltaics, scientists and researchers are working fervently to produce a combination of efficient, stable, low cost and scalable devices. Methylammonium lead trihalide perovskite has attracted intense interest due to its high photovoltaic performance, low cost, and ease of manufacture. Their high absorption coefficient, tunable bandgap, low-temperature processing, and abundant elemental constituent provide innumerable advantages over other thin film absorber materials. Since the perovskite film is the most important in the device, morphology, crystallization, compositional and interface engineering have been explored to boost its performance and stability. High temperatures necessary for crystallization of organic-inorganic hybrid perovskite films …

Gamma-Ray Radiation Effects In Graphene-Based Transistors With H-Bn Nanometer Film Substrates, E. J. Cazalas, Michael R. Hogsed, S. R. Vangala, Michael R. Snure, John W. Mcclory

Faculty Publications

Radiation effects on graphene field effect transistors (GFETs) with hexagonal boron nitride (h-BN) thin film substrates are investigated using 60Co gamma-ray radiation. This study examines the radiation response using many samples with varying h-BN film thicknesses (1.6 and 20 nm thickness) and graphene channel lengths (5 and 10 μm). These samples were exposed to a total ionizing dose of approximately 1 Mrad(Si). I-V measurements were taken at fixed time intervals between irradiations and postirradiation. Dirac point voltage and current are extracted from the I-V measurements, as well as mobility, Dirac voltage hysteresis, and the total number of GFETs that remain …

The Ph Sensing Properties Of Rf Sputtered Ruo2 Thin-Film Prepared Using Different Ar/O2 Flow Ratio, Ali Sardarinejad, Devendra Kumar Maurya, Kamal Alameh

Research outputs 2014 to 2021

The influence of the Ar/O₂ gas ratio during radio frequency (RF) sputtering of the RuO₂ sensing electrode on the pH sensing performance is investigated. The developed pH sensor consists in an RF sputtered ruthenium oxide thin-film sensing electrode, in conjunction with an electroplated Ag/AgCl reference electrode. The performance and characterization of the developed pH sensors in terms of sensitivity, response time, stability, reversibility, and hysteresis are investigated. Experimental results show that the pH sensor exhibits super-Nernstian slopes in the range of 64.33-73.83 mV/pH for Ar/O₂ gas ratio between 10/0-7/3. In particular, the best pH sensing performance, in …

Nanowire Giant Magnetoresistance Thin Films For Magnetic Sensors, Bryan Cox

Doctoral Dissertations

This dissertation details a novel method to fabricate magnetic sensors using nanowire giant magnetoresistance (GMR) thin films. In 1988, Albert Fert and Peter Grünberg both independently discovered a new physical phenomenon called GMR. GMR is a quantum mechanical effect found in thin film materials that are composed of alternating nanoscale ferromagnetic and non-magnetic conductive layers. When a GMR material is in the presence of a magnetic field, a change in electrical resistance is observed. The GMR effect has been utilized to produce magnetic sensors that have been used in a variety of applications, such as computer hard drive read heads, …

Ultrafast Electron Diffraction Study Of The Dynamics Of Antimony Thin Films And Nanoparticles, Mahmoud Abdel-Fattah

Electrical & Computer Engineering Theses & Dissertations

The ultrafast fast phenomena that take place following the application of a 120 fs laser pulse on 20 nm antimony thin films and 40 nm nanoparticles were studied using time-resolved electron diffraction. Samples are prepared by thermal evaporation, at small thickness (< 10 nm) antimony nanoparticles form while at larger thicknesses we get continuous thin films.

The samples are annealed and studied by static heating to determine their Debye temperatures, which were considerably less than the standard value. The thermal expansion under static heating also yielded the expansion coefficient of the sample material. Nanoparticle samples gave a very accurate thermal expansion coefficient (11 × 10^-6 K^-1).

Ultrafast time resolved electron diffraction …

Contact Resistance Study Of Noble Metals And Alloy Films Using A Scanning Probe Microscope Test Station, Lei Chen, H. Lee, Z. J. Guo, Nicol E. Mcgruer, K. W. Gilbert, S. Mall, Kevin D. Leedy, George G. Adams

George G. Adams

The proper selection of electrical contact materials is one of the critical steps in designing a metal contact microelectromechanical system (MEMS) switch. Ideally, the contact should have both very low contact resistance and high wear resistance. Unfortunately this combination cannot be easily achieved with the contact materials currently used in macroswitches because the available contact force in microswitches is generally insufficient (less than 1 mN) to break through nonconductive surface layers. As a step in the materials selection process, three noble metals, platinum (Pt), rhodium (Rh), ruthenium (Ru), and their alloys with gold (Au) were deposited as thin films on …

Contact Resistance Study Of Noble Metals And Alloy Films Using A Scanning Probe Microscope Test Station, Lei Chen, H. Lee, Z. J. Guo, Nicol E. Mcgruer, K. W. Gilbert, S. Mall, Kevin D. Leedy, George G. Adams

Nicol E. McGruer

The proper selection of electrical contact materials is one of the critical steps in designing a metal contact microelectromechanical system (MEMS) switch. Ideally, the contact should have both very low contact resistance and high wear resistance. Unfortunately this combination cannot be easily achieved with the contact materials currently used in macroswitches because the available contact force in microswitches is generally insufficient (less than 1 mN) to break through nonconductive surface layers. As a step in the materials selection process, three noble metals, platinum (Pt), rhodium (Rh), ruthenium (Ru), and their alloys with gold (Au) were deposited as thin films on …